Light emitting element
A technology of light-emitting elements and light-emitting layers, which is applied in the directions of electrical components, optics, light sources, etc., can solve the problems of uneven current dispersion and poor light-emitting efficiency of light-emitting diodes 1
Active Publication Date: 2012-10-10
EPISTAR CORP
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Problems solved by technology
Among them, the p-type electrode and n-type electrode are also distributed in a parallel helical structure, which can solve the problems of uneven current dispersion and poor luminous efficiency of known nitride light-emitting diodes 1
Method used
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[0062] Figure 5A It is a top view showing the structure of the light emitting element 10 of the first embodiment, Figure 5B It is a cross-sectional view showing the structure of the light-emitting element 10 along the line BB'. The light-emitting element 10, such as a light-emitting diode (LED), includes: a substrate 100, a buffer layer 110, a first semiconductor layer 120, a light-emitting layer 130, a second semiconductor layer 140, first and second electrodes 151 and 152, and first, The second electrode pads 161 and 162 . In this embodiment, the light-emitting element 10 is a rectangular cube with a side length of 610 μm and a frontal area of about 3.72×10 5 μm 2 , and its corresponding light-emitting layer has the same area as it. Each epitaxial layer of the light-emitting element 10 is formed on the substrate 100 by methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular-Beam Epitaxy (MBE), and the epitaxial structure is sequentially These ar...
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Abstract
The invention discloses a light emitting element, a light-source generation device and a backlight source device. The light emitting element comprises a substrate, an extension structure, a first conductive structure and a second conductive structure, wherein the extension structure is positioned on the substrate and comprises a first semiconductor layer, a second semiconductor layer and a light emitting layer which is positioned between the first semiconductor layer and the second semiconductor layer; the extension structure has a groove; the side of the extension structure and partial surface of the first semiconductor layer are exposed; the first conductive structure is positioned on the exposed surface of the first semiconductor layer in the groove; the second conductive structure is positioned on the second semiconductor layer; the first conductive structure comprises a first electrode and a first electrode pad which are in electrical connection; the second conductive structure comprises a second electrode and a second electrode pad which are in electrical connection; and the area of at least one selected from the first electrode pad and the second electrode pad is between 1.5*10<4>mu m<2> and 6.2*10<4>mu m<2> so as to be connected with at least two wires.
Description
technical field [0001] The invention relates to a light-emitting element, in particular to a light-emitting diode element with a current dispersing electrode. Background technique [0002] Light-emitting diodes (LEDs) have different light-emitting principles and structures from traditional light sources. They have the advantages of small size and high reliability, and are widely used in the market. For example, optical display devices, laser diodes, traffic signal signs, data storage devices, communication devices, lighting devices, and medical devices. [0003] Please refer to Figure 1A , 1B , Figure 1A Shown is a top view of the structure of a known nitride light-emitting diode 1, and Figure 1B depicted as Figure 1A The structural cross-sectional view of the known nitride light-emitting diode 1 along the A-A' section line. The structure of the known nitride light-emitting diode 1 includes a substrate 11, an n-type nitride layer 12, a light-emitting layer 13, a p-typ...
Claims
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IPC IPC(8): H01L33/00H05B37/00H05B37/02G02F1/13357H01L33/38
Inventor 沈建赋郭政达陈纬守刘宗宪古依雯谢明勋
Owner EPISTAR CORP