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Method and controller for preventing nonvolatile semiconductor memory from occurring read interference

A volatile storage and non-volatile technology, applied in the field of storage media reading technology, can solve the problems of data abnormality, loss, multi-layer storage unit flash memory use stability and low use stability

Active Publication Date: 2009-07-29
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the memory capacity of the multi-level storage unit flash memory will be higher than that of the single-level storage unit flash memory, but the use stability of the multi-level storage unit flash memory will be higher than that of the single-level storage unit flash memory. low stability
[0004] However, no matter whether the data stored in the same block in the multi-level memory unit flash memory or the single-level memory unit flash memory is read multiple times, for example, the number of times of reading between 100,000 and 1 million times , it is very likely that the read data is wrong, and even the data stored in the block that has been read many times will be abnormal or lost

Method used

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  • Method and controller for preventing nonvolatile semiconductor memory from occurring read interference
  • Method and controller for preventing nonvolatile semiconductor memory from occurring read interference
  • Method and controller for preventing nonvolatile semiconductor memory from occurring read interference

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Embodiment Construction

[0063] The technical function to be achieved by the present invention is to effectively suppress the probability of read disturbance, so as to correctly read all the data stored in the non-volatile memory. The following content will provide a detailed description of the technical features and the desired technical effects of this case, so as to provide reference for those skilled in the art related to the present invention.

[0064] figure 1 A system block diagram of the non-volatile memory storage device 100 is shown. Please refer to figure 1 , the nonvolatile memory storage device 100 generally includes a controller 101 and a nonvolatile memory 103 . Wherein, the controller 101 is used to control the overall operation of the non-volatile memory storage device 100 , such as storing, reading and erasing data. In this embodiment, the controller 101 includes a memory management module 101a, a non-volatile memory interface 101b, a buffer memory 101c and a micro-processing unit...

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Abstract

The invention provides a method for preventing a nonvolatile memory from occurring reading interference, wherein, the nonvolatile memory is provided with a plurality of blocks; the blocks are at least divided into a data group and a spare group and each block is provided with a plurality of paging. The method for preventing a nonvolatile memory from occurring reading interference provided by the invention comprises the following steps: firstly, the reading times of at least one first block of the blocks in the data group is recorded; and then, when the reading times of the first block is greater than a preset value, the data originally stored in the first block is updated.

Description

technical field [0001] The present invention relates to a storage medium reading technology, and in particular to a method and controller for preventing non-volatile memory from reading interference. Background technique [0002] In recent years, due to the rapid growth of digital cameras, mobile phones with camera functions, MP3, and MP4, consumers' demand for storage media has also increased sharply. Looking at all the storage media today, due to the characteristics of non-volatile data, power saving, small size, and no mechanical structure, flash memory (Flash Memory) is the most suitable for built-in the above-mentioned multiple programmable in portable multimedia devices. Moreover, since external products such as small memory cards and flash drives are also in great demand for modern people, all manufacturers of flash memory are all aiming at making the capacity of flash memory larger and more stable in use. We are working hard to improve the research and development ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10
Inventor 陈振业
Owner PHISON ELECTRONICS