Method for preventing reading interference, storage control circuit unit and storage device

A technology for reading interference and controlling circuits, which is applied in the field of memory control circuit units and storage devices

Active Publication Date: 2016-02-10
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because of the existence of such a phenomenon, all manufacturers must develop a mechanism that can ensure the correct storage of data

Method used

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  • Method for preventing reading interference, storage control circuit unit and storage device
  • Method for preventing reading interference, storage control circuit unit and storage device
  • Method for preventing reading interference, storage control circuit unit and storage device

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Embodiment Construction

[0098] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0099] figure 1 It is a flowchart of a method for preventing read disturbance according to the present invention.

[0100] Please refer to figure 1 , in order to ensure that data is correctly stored in the memory storage device and effectively prevent the occurrence of read disturbance, the method for preventing read disturbance proposed by the exemplary embodiment of the present invention will count when an operation command is received from the host system Operation times value, and the first physical erasing unit is selected to execute the operation command (step S101); when the operation times value is not less than the operation times t...

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Abstract

The invention provides a method for preventing reading interference, a storage control circuit unit and a storage device. The method comprises the steps that when an operation instruction is received from a host system, an operation time value is counted, wherein a first entity erasing unit is selected to execute the operation instruction; when the operation time value is no less than an operation time threshold value, a second entity erasing unit is selected, and data in the second entity erasing unit are read; whether a data error occurs in the second entity erasing unit is judged according to the data read from the second entity erasing unit; in addition, if the data error occurs, a third entity erasing unit is selected, the data read from the second entity erasing unit are corrected to generate corrected data, and the corrected data are written into the third entity erasing unit.

Description

technical field [0001] The present invention relates to a method for preventing read interference for a rewritable non-volatile memory module, a memory control circuit unit and a storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., in recent years, the rewritable non-volatile memory industry Become a very popular part of the electronics industry. For example, a solid-state drive using flash memory as a storage medium has been widely used as a hard disk of a computer host to improve the access performance of the computer. [0003] According to the number of bits that each storage unit can store, NAND flash memory can be divided into single-level stora...

Claims

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Application Information

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IPC IPC(8): G06F3/06
Inventor叶志刚
OwnerPHISON ELECTRONICS