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Method for Preventing Read Disturbance, Memory Control Circuit Unit, and Storage Device

A technology for reading interference and controlling circuits, which is applied in the field of memory control circuit units and storage devices

Active Publication Date: 2018-07-31
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because of the existence of such a phenomenon, all manufacturers must develop a mechanism that can ensure the correct storage of data

Method used

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  • Method for Preventing Read Disturbance, Memory Control Circuit Unit, and Storage Device
  • Method for Preventing Read Disturbance, Memory Control Circuit Unit, and Storage Device
  • Method for Preventing Read Disturbance, Memory Control Circuit Unit, and Storage Device

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Experimental program
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Embodiment Construction

[0098] In general, a memory storage device (also referred to as a memory storage system) includes a rewritable non-volatile memory module and a controller (also referred to as a control circuit). Typically a memory storage device is used with a host system so that the host system can write data to or read data from the memory storage device.

[0099] figure 1 It is a flow chart of the method for preventing read disturbance according to the present invention.

[0100] Please refer to figure 1 , in order to ensure the correct storage of data in the memory storage device and effectively prevent the occurrence of read disturbance, the method for preventing read disturbance proposed by the exemplary embodiment of the present invention will count the number of the value of the number of operations, and the first physical erasing unit is selected to execute the operation command (step S101); when the value of the number of operations is not less than the threshold value of the numb...

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PUM

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Abstract

The invention provides a method for preventing read interference, a memory control circuit unit and a memory device. The method includes: counting the number of operations when an operation command is received from the host system, wherein the first physical erasing unit is selected to execute the operation command. The method further includes: when the value of the number of operations is not less than the threshold value of the number of operations, selecting a second physical erasing unit, and reading data in the second physical erasing unit. The method further includes: judging whether a data error occurs in the second physical erasing unit according to the data read from the second physical erasing unit. In addition, if a data error occurs, select the third physical erasing unit, correct the data read from the second physical erasing unit to generate corrected data, and write the corrected data into the third physical erasing unit.

Description

technical field [0001] The present invention relates to a method for preventing read disturb for a rewritable non-volatile memory module, a memory control circuit unit and a storage device. Background technique [0002] Digital cameras, cell phones and MP3s have grown rapidly in recent years, resulting in a rapid increase in consumer demand for storage media. Because rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatile, power saving, small size, no mechanical structure, fast reading and writing speed, etc., in recent years, rewritable non-volatile memory The memory industry has become a very popular part of the electronics industry. For example, a solid-state drive using a flash memory as a storage medium has been widely used as a hard disk of a computer host to improve the access performance of the computer. [0003] According to the number of bits that each memory cell can store, NAND flash memory can be divided int...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
Inventor 叶志刚
Owner PHISON ELECTRONICS