Donor substrate and method of manufacturing display
A technology of donor substrates and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of reduced transfer accuracy, reduced productivity, color mixing, etc., and achieve the effect of reducing thermal diffusion
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 approach
[0057] monitor
[0058] figure 1 The structure of the display of the first embodiment of the present invention is illustrated. This display is used as an ultra-thin organic light-emitting color display and the like. In this display, for example, a display area 110 in which a plurality of light emitting devices 10R, 10G, and 10B described later in a matrix form are arranged is formed on a driving substrate 11 made of glass, and in the display area 110 A signal line driver circuit 120 and a scan line driver circuit 130 serving as image display drivers are formed around the area 110 .
[0059] In the display region 110, a pixel driving circuit 140 is formed. figure 2 An embodiment of a pixel drive circuit 140 is illustrated. The pixel drive circuit 140 is formed in a layer below the first electrode 13 to be described later. The pixel driving circuit 140 is an active driving circuit including: a driving transistor Tr1 and a writing transistor Tr2, a capacitance Cs (holding c...
Deformed example 1
[0111] Figure 11 The structure of a donor substrate 40A according to Modification 1 of the present invention is shown in the figure. In the donor substrate 40A of Modification 1, on each region divided by the protrusion structure 44 , the light-to-heat conversion layer 42 is provided. Therefore, it is possible to form a transfer layer containing light emitting materials of different colors for each area, thereby reducing the number of times of transfer. Except for the above description, the structure is the same as that of the first embodiment.
[0112] The donor substrate 40A of Modification 1 can be manufactured in the same manner as the first embodiment except that the light-to-heat conversion layer 42 is provided on each region divided by the protrusion structure 44 .
[0113] Next, a method of manufacturing a display using the donor substrate 40A of Modification 1 will be described.
[0114] Similar to the first embodiment, the first electrode 13 , the insulating laye...
no. 2 approach
[0121] Figure 14 The structure of the donor substrate 40B of the second embodiment of the present invention is illustrated. The donor substrate 40B has the same structure as that of the donor substrate 40 in the first embodiment except that a thermal interference layer 46 is provided between the base 41 and the light-to-heat conversion layer 42 . Therefore, the same reference numerals are used to designate substantially the same elements, and explanations are omitted.
[0122] The substrate 41 , the light-to-heat conversion layer 42 , the heat insulating layer 43 , the protruding structure 44 and the anti-pollution layer 45 are fabricated in the same manner as the first embodiment.
[0123]The heat insulating layer 46 increases the absorption rate of the laser light LB in the light-to-heat conversion layer 42 . The heat insulating layer 46 has a thickness of, for example, 15 nm or more and 80 nm or less, and is made of a-Si. Corresponding to the region (light emitting regi...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More