Surface coarsening gallium nitride light-emitting component and manufacturing method thereof
A technology of gallium nitride system and light-emitting element, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems of reducing the luminous brightness of components and small energy gap, and achieve the effect of good quality and not easy to degrade the characteristics of components.
Inactive Publication Date: 2010-02-10
ZHANJING TECH SHENZHEN +1
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[0008] The possible disadvantage of the above-mentioned short-period superlattice barrier buffer layer is that its energy gap (Band Gap) is small, and it is easy to absorb light from the light-emitting layer, reducing the luminous brightness of the device
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[0038] The direction of the present invention discussed here is a light emitting element. In order to provide a thorough understanding of the present invention, detailed structural elements will be set forth in the following description. Obviously, the practice of the invention is not restricted to specific details familiar to those skilled in light-emitting elements. On the other hand, well-known elements have not been described in detail in order not to unnecessarily limit the invention. Preferred embodiments of the present invention will be described in detail as follows, but in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, and it is defined by the scope of the following claims allow.
[0039] figure 1 According to the first preferred embodiment of the present invention, it is a schematic cross-sectional view of a gallium nitride-based light-emitti...
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The invention relates to a surface coarsening gallium nitride light-emitting component and a manufacturing method thereof. The gallium nitride light-emitting component can comprise a substrate, a buffer layer, an n-type third-family nitride semiconductor material layer, a third-family nitride semiconductor light-emitting layer, a first p-type third-family nitride semiconductor material layer, a p-type heavy doping third-family nitride semiconductor material layer, and a second p-type third-family nitride semiconductor coarsened layer. The first p-type third-family nitride semiconductor material layer is grown on the third-family nitride semiconductor light-emitting layer. The p-type heavy doping third-family nitride semiconductor material layer is grown on the first p-type third-family nitride semiconductor material layer. The second p-type third-family nitride semiconductor coarsened layer is grown on the p-type heavy doping third-family nitride semiconductor material layer. The gallium nitride light-emitting component not only has the characteristic of surface coarsening, but also can ensure the brightness.
Description
Technical field [0001] The present invention relates to an electronic product; in particular, it relates to a light-emitting element. Background technique [0002] Generally speaking, a better light-emitting component should be one that allows light to be emitted outside the component as much as possible, thereby increasing the brightness and allowing users to see it. [0003] In order to improve the brightness of light-emitting components, some existing technologies roughen the surface of the components. Taking US Patent No. 6441403 as an example, it discloses a light-emitting element that uses quantum wells to emit light. According to the patent, the main method is to use quaternary materials (Al, In, Ga, N) to grow N-type (300) aluminum gallium indium nitride (Al p In q Ga 1-p-q N) material layer or P-type (100) aluminum gallium indium nitride material layer. [0004] The above-mentioned aluminum gallium indium nitride material layer can also form an uneven surface w...
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IPC IPC(8): H01L33/00
Inventor 黄世晟涂博闵叶颖超林文禹吴芃逸徐智鹏詹世雄
Owner ZHANJING TECH SHENZHEN