Method for manufacturing element pattern

Abstract

The invention relates to a method for manufacturing an element pattern, which can be used for forming a pattern with a line space less than the exposure limit. The method comprises the following steps: firstly, forming a first pattern with a first density in a predetermined area on a substrate, wherein the first pattern comprises a basal part along a first direction and at least two protrusion parts along a second direction, and the protrusion part is connected with the basal part; then, forming a gap wall on the side wall of each protrusion part, wherein the gap wall is not in contact with the basal part, the gap walls between the two adjacent protrusion parts are not in contact, and the gap is formed between the two adjacent protrusion parts; then, forming a second pattern on the substrate, wherein the second pattern is located in the gap to define a third pattern with a second density in the predetermined area, and the third pattern is formed by the first and second patterns.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor component, and in particular to a manufacturing method of an element pattern. Background technique [0002] With the increase of the integration level of semiconductor elements, it is generally necessary to reduce the size of the circuit structural elements according to the gradually reduced design rules of the manufacturing methods of the integrated circuit elements. However, although the line width and line spacing of wires are continuously shrinking, there are still limitations. For example, the exposure limit of the photolithography process leads to insufficient resolution, so the line width and line spacing are only reduced to a certain extent. [0003] When fabricating the comb pattern, there is also the problem of being unable to reduce the line distance between the two conducting wires. In the prior art, there is a line by spacer fill (LBSF) method, which can form anoth...

AI Technical Summary

Problems solved by technology

However, the LBSF method is not suitable for the fabrication of comb patterns

The reason is that if the LBSF method is used to make the comb-like pattern, there is a problem that another wire formed between the two wires cannot be connected to the comb-shaped pattern, and a comb-shaped pattern with a line distance smaller than the exposure limit cannot be formed.

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