Device for reazliing time delay integral of area array CMOS image sensor

A technology of time-delay integration and image sensor, which is applied in the special application field of CMOS image sensor, can solve the problems that photoelectron transfer and integration cannot be carried out, TDICMOS devices are not easy to obtain, etc., and achieve the effect of flexible selection

Inactive Publication Date: 2010-10-06
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

However, after CMOS devices generate photoelectrons, they will be converted into voltage signals immediate

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  • Device for reazliing time delay integral of area array CMOS image sensor
  • Device for reazliing time delay integral of area array CMOS image sensor
  • Device for reazliing time delay integral of area array CMOS image sensor

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Embodiment Construction

[0023] The principle of TDI CCD time delay integration is as follows: figure 1 shown. At time T1, the first row of pixels 11 is exposed to generate photoelectrons e1; at T2 time, the second row of pixels 12 is exposed to generate photoelectrons e2, and at the same time, the photoelectrons e1 of the first row of pixels are transferred to the second row of pixels 12 and e2 The second-level integration result is obtained by adding; at time T3, the photoelectron e3 generated by the exposure of the pixel 13 in the third row is accumulated with the photoelectron e1 and photoelectron e2 to obtain the third-level integration result. By analogy, if the number of integration stages is N, then the pixels 14 in the Nth row integrate the same target N times to obtain the final N-level integration results, thereby improving the sensitivity of the CCD image sensor.

[0024] like figure 2 As shown, the device for realizing the time delay integration of the area array CMOS image sensor of t...

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Abstract

The invention relates to a device for realizing time delay integral of an area array CMOS image sensor. The device comprises a TDI sequential control device and a random access memory. The TDI sequential control device generates a CMOS image sensor driving waveform, and the CMOS image sensor starts to output digital image generated by push-broom imaging to the random access memory; TDI controlled time sequence generated by the TDI sequential control device is transmitted to the random access memory, time delay integral process of the digital image is completed in the random access memory, and various levels of the processed integral results are stored; and the final image after time delay integral processing is transmitted to an image acquisition card or the memory. On the premise of not changing the structure of the area array CMOS image sensor, the device can achieve the time delay integral of the digital image by virtue of an external part so that an area array CMOS imaging system can become the future imaging system for achieving ground remote sensing instead of TDI CCD.

Description

technical field [0001] The invention belongs to the application field of photoelectric sensors and relates to a method for special application of CMOS image sensors. Background technique [0002] At present, the application of CMOS image sensor has gradually been paid attention to by people. Compared with traditional CCD image sensors, CMOS sensors have the advantages of low power consumption, high integration, small size, strong anti-interference ability, and only need a single power supply. Therefore, image sensors are widely used in civilian cameras, machine vision, astronomical observation, and small satellites. , star sensors and other application fields have shown great potential. However, due to the photoelectric conversion principle, internal structure and process, etc., the current CMOS image sensors are mostly area array structures, and the linear array CMOS or TDI CMOS (time delay integral CCD) corresponding to the linear array CCD and TDI CCD CMOS) devices are ...

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Application Information

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IPC IPC(8): H04N5/335H04N5/232
Inventor 曲宏松金光张叶张贵祥郑亮亮
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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