Device for reazliing time delay integral of area array CMOS image sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
- Publication Date
- 2010-10-06
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the application field of photoelectric sensors and relates to a method for special application of CMOS image sensors. Background technique
[0002] At present, the application of CMOS image sensor has gradually been paid attention to by people. Compared with traditional CCD image sensors, CMOS sensors have the advantages of low power consumption, high integration, small size, strong anti-interference ability, and only need a single power supply. Therefore, image sensors are widely used in civilian cameras, machine vision, astronomical observation, and small satellites. , star sensors and other application fields have shown great potential. However, due to the photoelectric conversion principle, internal structure and process, etc., the current CMOS image sensors are mostly area array structures, and the linear array CMOS or TDI CMOS (time delay integral CCD) corresponding to the linear array CCD and TDI CCD CMOS) devices are ...