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Variable-resistance memory device and its driving method

A technology of resistive storage and storage elements, applied in the field of variable resistive storage devices and their driving, can solve problems such as excessive stress and increased leakage

Inactive Publication Date: 2012-02-08
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Excessive stress caused by data rewrite current / voltage increases leakage and changes (or rather, reduces) the number of tolerable data rewrite operations
Thus, excessive stress is undesirable

Method used

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  • Variable-resistance memory device and its driving method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068] Embodiments of the present disclosure are described for a typical case where the storage element is a storage element employed in a ReRAM, in sections arranged as follows.

[0069] 1: First embodiment (which implements a configuration in which the first and second path transistors are NMOS transistors)

[0070] 2: Second embodiment (which implements a configuration in which the first and second path transistors are PMOS transistors)

[0071] 1: The first embodiment

[0072] Storage unit configuration

[0073] Figure 2A with 2B are diagrams each showing an equivalent circuit of a memory cell common to each embodiment of the present disclosure. pay attention, Figure 2A shows the write current, while the Figure 2B Erase current is shown. However, the memory cell configurations shown in the drawings themselves coincide with each other.

[0074] Figure 2A with 2B The memory cell MC shown in , employs a variable resistance element Re and an access transistor AT ...

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PUM

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Abstract

The invention discloses a variable-resistance memory device and its driving method. The variable-resistance memory device includes: a memory cell including a memory element being variable in resistance in accordance with a polarity of an application voltage applied to the memory element in a set or reset operation and an access transistor connected to the memory element in series between first and second common lines; and a driving circuit including a first path transistor connected between a first supply line for supplying a first voltage and the first common line as well as a second path transistor connected between a second supply line for supplying a second voltage and the first common line.

Description

technical field [0001] The present disclosure relates to a variable resistance memory device and a driving method thereof. The variable resistance memory device employs memory cells each including a memory element and an access transistor connected in series to the memory element. A memory element has a resistance that varies according to a voltage applied to the memory element. Background technique [0002] There is known a variable resistance memory device having a resistance that changes according to a voltage applied between electrodes separated from each other by an insulating layer serving as a memory layer of the variable resistance memory device. Such as "K.Tsunoda et al. 'Low Power and High Speed ​​Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V,' 2007 IEEE, pp.267-270" and "K.Aratani et al. Documents such as 'A Novel Resistance Memory with High Scalability and Nanosecond Switching,' Technical Digest IEDM 2007, pp.783-786" (herei...

Claims

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Application Information

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IPC IPC(8): G11C16/02G11C16/10
CPCG11C13/0007G11C13/0009G11C13/0026G11C13/0028G11C13/004G11C13/0061G11C13/0069G11C2013/0073G11C2013/0078G11C2213/79G11C13/00G11C16/06G11C16/30
Inventor 北川真小方宪太郎
Owner SONY CORP