Volume acoustic wave film resonator and manufacture method thereof

Abstract

The invention relates to a volume acoustic wave film resonator and a manufacture method thereof, wherein the volume acoustic wave film resonator comprises a silicon base plate, a first metal layer, a piezoelectric layer and a second metal layer, wherein the first metal layer is formed on the silicon base plate and comprises a plurality of lower electrodes, the piezoelectric layer is covered on the first metal layer and at least comprises a first upper electrode installing region, a second upper electrode installing region, a third upper electrode installing region, a first modification region, a second modification region and a third modification region, the first modification region surrounds the outer side of the first upper electrode installing region, the second modification region surrounds the outer side of the second upper electrode installing region, the third modification region surrounds the outer side of the third upper electrode installing region, the second metal layer is formed on the piezoelectric layer and comprises a first upper electrode, a second upper electrode and a third upper electrode, the first upper electrode is positioned on the first upper electrode installing region, the second upper electrode is positioned on the second upper electrode installing region, and the third upper electrode is positioned in the third upper electrode installing region.

Description

technical field [0001] The invention relates to a bulk acoustic wave thin-film resonator and a manufacturing method thereof, in particular to a bulk acoustic wave thin-film resonator capable of increasing the signal isolation of a bulk acoustic wave resonance element and a manufacturing method thereof. Background technique [0002] In recent years, bulk acoustic wave thin film resonators (FBAR) have become a development focus, such as figure 1 A bulk acoustic wave thin film resonator 10 shown containing a plurality of bulk acoustic wave thin film resonant elements includes a silicon substrate 11, a first metal layer 12, a piezoelectric layer 13 and a second metal layer 14, the first metal Layer 12 is formed on the silicon substrate 11, the first metal layer 12 has a plurality of lower electrodes 12a, the piezoelectric layer 13 is formed on the silicon substrate 11 and covers the first metal layer 12, the second metal layer 14 Formed on the piezoelectric layer 13, and the s...

AI Technical Summary

Problems solved by technology

[0002] In recent years, bulk acoustic wave thin film resonators (FBAR) have become a development focus, such as figure 1 A bulk acoustic wave thin film resonator 10 shown containing a plurality of bulk acoustic wave thin film resonant elements includes a silicon substrate 11, a first metal layer 12, a piezoelectric layer 13 and a second metal layer 14, the first metal Layer 12 is formed on the silicon substrate 11, the first metal layer 12 has a plurality of lower electrodes 12a, the piezoelectric layer 13 is formed on the silicon substrate 11 and covers the first metal layer 12, the second metal layer 14 Formed on the piezoelectric layer 13, and the second metal layer 14 includes a first upper electrode 14a, a second upper electrode 14b and a third upper electrode 14c, the bulk acoustic wave thin film resonator 10 utilizes the piezoelectric effect to Mechanical energy is transformed into an electrical signal through the deformation of the piezoelectric layer 13. Due to the mechanical vibration of the bulk acoustic wave thin film resonator 10, the vibration energy does not have a fixed directionality, so the mechanical vibration energy will be conducted by the piezoelectric layer 13, so Cause signal interference, resulting in poor signal quality

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