Bulk acoustic wave film resonator and manufacturing method thereof

Abstract

The invention relates to a bulk acoustic wave film resonator and a manufacturing method thereof. The bulk acoustic wave film resonator comprises: a silicon substrate, a first metal layer and a second metal layer, and a piezoelectric layer. The first metal layer is formed on the silicon substrate. The first metal layer comprises a plurality of lower electrodes. The piezoelectric layer is formed on the silicon substrate and covers the first metal layer. The piezoelectric layer at least possesses: a first top electrode arrangement zone, a second top electrode arrangement zone, a third top electrode arrangement zone, a first blocking area located on an outboard of the first top electrode arrangement zone, a second blocking area located on an outboard of the second top electrode arrangement zone and a third blocking area located on an outboard of the third top electrode arrangement zone, wherein a first groove is formed in the first blocking area, a second groove is formed in the second blocking area and a third groove is formed in the third blocking area. A second metal layer is formed on the piezoelectric layer. The second metal layer comprises a first, a second and a third top electrode. The first top electrode is located in the first top electrode arrangement zone. The second top electrode is located in the second top electrode arrangement zone. And the third top electrode is located in the third top electrode arrangement zone.

Description

technical field [0001] The invention relates to a bulk acoustic wave thin-film resonator and a manufacturing method thereof, in particular to a bulk acoustic wave thin-film resonator capable of increasing the signal barrier of a bulk acoustic wave resonating element and a manufacturing method thereof. Background technique [0002] In recent years, bulk acoustic wave thin film resonators (FBAR) have become a development focus, Figure 5 A bulk acoustic wave thin film resonator 10 shown containing a plurality of bulk acoustic wave thin film resonant elements includes a silicon substrate 11, a first metal layer 12, a piezoelectric layer 13 and a second metal layer 14, the first metal Layer 12 is formed on the silicon substrate 11, the first metal layer 12 has a plurality of lower electrodes 12a, the piezoelectric layer 13 is formed on the silicon substrate 11 and covers the first metal layer 12, the second metal layer 14 Formed on the piezoelectric layer 13, and the second met...

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Problems solved by technology

[0002] In recent years, bulk acoustic wave thin film resonators (FBAR) have become a development focus, Figure 5 A bulk acoustic wave thin film resonator 10 shown containing a plurality of bulk acoustic wave thin film resonant elements includes a silicon substrate 11, a first metal layer 12, a piezoelectric layer 13 and a second metal layer 14, the first metal Layer 12 is formed on the silicon substrate 11, the first metal layer 12 has a plurality of lower electrodes 12a, the piezoelectric layer 13 is formed on the silicon substrate 11 and covers the first metal layer 12, the second metal layer 14 Formed on the piezoelectric layer 13, and the second metal layer 14 includes a first upper electrode 14a, a second upper electrode 14b and a third upper electrode 14c, the bulk acoustic wave thin film resonator 10 utilizes the piezoelectric effect to Mechanical energy is transformed into an electrical signal through the deformation of the piezoelectric layer 13, but due to the mechanical vibration of the bulk acoustic wave thin film resonator 10, the vibration energy does not have a fixed directionality, so the mechanical vibration energy will be conducted by the piezoelectric layer 13, As a result, signal interference results in poor signal quality

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