Cleaning solution
A technology of cleaning solution and ammonia carboxylate complex, applied in the field of cleaning solution, can solve the problems of reduced copper removal rate and instability, and achieve the effect of avoiding the instability of removal rate
Active Publication Date: 2012-05-16
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF5 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In this case, although the conventional citric acid cleaning solution can remove the residue on the polishing pad, the acid residue on the polishing pad after cleaning will easily lead to the reduction and instability of the copper removal rate
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0013] Table 1 shows Examples 1-22 of the cleaning solution of the present invention. The cleaning solution is prepared according to the formula given in the table, and the mass percentage is made up to 100% with water. with KOH or HNO 3 Adjust to desired pH. Mix well and serve.
[0014] Table 1 cleaning solution embodiment 1~22
[0015] Example
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a cleaning solution, used for cleaning a chemically mechanical polishing pad for copper. The cleaning solution contains at least one aminocarboxyl complex. The cleaning solution disclosed by the invention can be used for cleaning a polishing pad and the surface of a polished wafer in a copper polishing process.
Description
technical field [0001] The invention relates to a cleaning solution, in particular to a cleaning solution for cleaning copper chemical mechanical polishing pads. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in int...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/32
Inventor 蔡鑫元荆建芬张建
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD