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Etching method and system

An etching system and main etching technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as large CD, metal layer etching residue, etc.

Active Publication Date: 2012-06-06
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, after the etching stop point, the actual overetching time is less than the normal overetching time, that is, the thickness of the metal layer etched during the entire etching process is actually less than the normal etching thickness. In this case, It is often easy to cause etching residues on the metal layer, or the CD (critical dimension) of the device is too large and other adverse consequences

Method used

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  • Etching method and system

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Embodiment 1

[0045] Based on this, the first embodiment provides an etching method. The flowchart of the method is as follows: figure 1 As shown, including the following steps:

[0046] Step S101: the etching equipment is started to start the main etching;

[0047] Step S102: When the maximum main etching time is reached or the etching stop point is captured, the main etching stops;

[0048] Step S103: After the main etching is stopped, determine whether the etching stop point is captured when the main etching is stopped, if yes, go to step S104, if not, go to step S105;

[0049] It should be noted that the determination step is added in this embodiment to determine whether the maximum main etching time set initially is sufficient to capture the etching stop point, and to lay a foundation for whether the maximum main etching time needs to be extended in the future.

[0050] Step S104: If the main etching stops at the etching stop point, it means that the set maximum main etching time is sufficient t...

Embodiment 2

[0075] Corresponding to the method embodiment, this embodiment discloses an etching system. The structure diagram of the system is as follows: figure 2 As shown, the system includes:

[0076] The first judging unit 11 is used for judging whether an etching stop point is captured when the main etching is stopped after the main etching is stopped;

[0077] The first control unit 13 is used to control the etching equipment to enter the over-etching and continue to capture the etching stop point under the condition that the etching stop point is not captured when the main etching is stopped. It stops automatically when the maximum over-etching time is set, and after capturing the stop point of etching, it stops automatically when the normal over-etching time passes;

[0078] The second judging unit 15 is used to judge whether an etching stop point is captured before the over-etching is stopped after the over-etching is stopped;

[0079] The calculation unit 16 is used to obtain the corr...

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Abstract

The invention discloses an etching method and an etching system, wherein the method comprises the following steps of: after main etching is stopped, judging whether etching stopping points are caught when the main etching is stopped, and if not, entering an over-etching step for continuously catching the etching stopping points; when the over-etching step reaches the preset maximum over-etching time, after the etching stopping points are caught and normal over-etching time is passed, automatically stopping; after the over etching is stopped, judging whether etching stopping points are caught or not before the over etching is stopped, and if so, obtaining a correction value of the maximum main etching time according to the etching thickness and the maximum main etching time; and adopting the correction value of the maximum main etching time to carry out next-time etching process. According to the embodiment of the invention, by the introduction of a judgment mechanism and a time feedback mechanism and control for the etching mode of etching equipment, the problems of the etching residual and slightly-large device CDs (Compact Discs) and the like after over-etching due to over-early stopping of the main etching in the prior art are solved.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and more specifically, to an etching method and system. Background technique [0002] With the rapid development of Ultra Large Scale Integration (ULSI), integrated circuit manufacturing processes have become more and more complex and sophisticated, and the requirements for etching effects have become more and more stringent. At present, the etching steps in the production process of semiconductor devices are generally divided into two steps: main etching and over-etching. The main etching adopts the method of capturing the etching stop point to stop the main etching in a timely manner, but if it reaches the preset maximum The main etching time still does not find the etching stop point, and the main etching will also be stopped, and then the over-etching is performed with a fixed etching time to avoid etching residue. [0003] However, the above-mentioned etching methods in...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/02
Inventor 胡骏李健
Owner CSMC TECH FAB2 CO LTD
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