The invention discloses a
cadmium zinc telluride wafer double-sided chemical mechanical
polishing method, which relates to a
semiconductor material
processing technology, and comprises the following steps: forming a diversion trench in a
polishing pad in advance so as to improve the flowability of a
polishing solution on the upper and lower surfaces of a
wafer based on the diversion trench, and bonding the polishing pad to a polishing disk; preparing a polishing solution comprising an
abrasive, water, a moistening agent and an
oxidizing agent according to a set ratio; selecting a loose
pulley sheet with a proper material and thickness, and placing a batch of
tellurium-
zinc-
cadmium wafers on the porous loose
pulley sheet; before polishing, a moistening agent is sprayed on the surface of the
tellurium-
zinc-
cadmium wafer so as to reduce the fragment probability of the wafer at the earlier stage of polishing; a polishing program is set, so that the flow of the polishing solution and the polishing pressure in each stage are increased in a gradient manner; in the polishing process, the dry-wet condition of the polishing pad is judged according to the condition of the polishing liquid overflowing between the upper polishing disc and the lower polishing disc, and adjustment is conducted through a polishing program; and cleaning and testing after polishing to finish polishing. The method is used for realizing batch double-sided chemical mechanical polishing of the
cadmium zinc telluride wafer.