Method for expanding dynamic range of time-delay integration-complementary metal oxide semiconductor (TDI-CMOS) image sensor

Abstract

The invention relates to an image sensor, and aims to enable the image sensor to well preserve the information of high light and low light and effectively expand a dynamic range. The technical scheme is that: a method for expanding the dynamic range of a time-delay integration-complementary metal oxide semiconductor (TDI-CMOS) image sensor comprises the following steps of: sequentially imaging object image points by using pixel units of different rows in the TDI-CMOS image sensor, inputting corresponding output signals into corresponding accumulators, and for a TDI-CMOS image sensor with N rows and M columns of pixels, regulating the exposure time of the N rows of pixels, namely once resetting each pixel within the exposure time of the pixel, wherein the final exposure time of the pixel is determined by the relative position of a resetting signal within the exposure time; and accumulating and fusing the output signals of the pixels within different exposure times in the accumulator, and outputting the processed signals. The method is mainly applied to the design and manufacture of the image sensor.

Description

technical field [0001] The present invention relates to a complementary metal oxide semiconductor image sensor, in particular to a method for extending the dynamic range of the image sensor, in particular to a method for extending the dynamic range of the TDI-CMOS image sensor. Background technique [0002] The time-delay integration (TDI) type complementary metal oxide semiconductor (CMOS) image sensor uses an area array structure to realize the function of line array scanning, and is characterized by relatively high signal-to-noise ratio and sensitivity. It is generally used in situations where the light level is relatively low or the relative motion speed is relatively large. Generally, the dynamic range of outdoor scene images is above 100dB, while the dynamic range of traditional CMOS image sensors (about 65-75dB) is difficult to meet the needs of wide dynamic range applications, and is subject to certain restrictions in many application fields. [0003] In recent year...

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Problems solved by technology

[0007] The present invention aims to overcome the deficiencies in the prior art such as the complex structure and large noise of multiple exposures in the pixel, the high storage capacity of multiple exposures outside the chip, and the reduction in frame rate, so that the TDI-CMOS image sensor can perform well Keep the information of strong light and weak light components, effectively expand the dynamic range of TDI-CMOS image sensor, in order to achieve the above-mentioned purpose, the technical scheme that the present invention adopts is, the method for expanding the dynamic range of TDI-CMOS image sensor, make TDI-CMOS image The pixel units in different rows in the sensor image the object image point in turn, and input the corresponding output signal into the corresponding accumulator. For a TDI-CMOS image sensor with N rows and M columns of pixels, the exposure time of N rows of pixels is calculated. Adjustment, that is: reset the pixel once within the pixel exposure time, the relative position of the reset signal within the exposure time determines the final exposure time of the pixel; the pixel output signals from different exposure times are accumulated in the accumulator, Output after fusion processing

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