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Structure of Semiconductor Heated Ion Transfer Tube Applied in Ion Mobility Spectrometer Detector

An ion transfer tube and ion mobility spectrometry technology, which is applied in the field of semiconductor heating ion transfer tube structure, can solve the problems of insufficient temperature and long cleaning time, and achieve the effects of low cost, shortened time, and improved electrothermal conversion efficiency

Active Publication Date: 2015-08-05
THE THIRD RES INST OF MIN OF PUBLIC SECURITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes it necessary to spend longer cleaning time when the ion transfer tube is cleaned because the temperature in the chamber is not high enough

Method used

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  • Structure of Semiconductor Heated Ion Transfer Tube Applied in Ion Mobility Spectrometer Detector
  • Structure of Semiconductor Heated Ion Transfer Tube Applied in Ion Mobility Spectrometer Detector

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Embodiment Construction

[0016] In order to understand the technical aspects of the present invention more clearly, the following examples are given in detail.

[0017] see figure 2 As shown, it is a schematic structural diagram of the semiconductor heated ion transfer tube applied to the ion mobility spectrometer detector of the present invention.

[0018] In one embodiment, the structure of the semiconductor heated ion transfer tube applied to the ion mobility spectrometer detector includes a ceramic insulating tube body 1 and a lumen 4 enclosed in the ceramic insulating tube body 1, and the ceramic insulating tube body 1 The outer body of the insulating tube is covered with a semiconductor electrothermal film 5 . The semiconductor electric heating film 5 is sprayed with the tin oxide semiconductor electric heating film 5 formed on the outer surface of the ceramic insulating pipe body 1 by a thermal spraying process.

[0019] In a preferred embodiment, two metal rings 6 are respectively welded an...

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Abstract

The invention relates to a semiconductor heating ion migration tube structure for an ion mobility spectrometry detector, which belongs to the technical field of the ion migration spectrometry. The semiconductor heating ion migration tube structure for the ion mobility spectrometry detector comprises a ceramic insulating tube body and a tube cavity which is encircled inside the ceramic insulating tube body, wherein a semiconductor electric heating film is wrapped outside the ceramic insulating tube body. By utilizing the semiconductor electric heating film, the electric heat conversion efficiency of the ion migration tube is greatly improved, so that the overall electric power for the ion migration tube detector can be reduced; and meanwhile, the working temperature of the semiconductor electric heating film can reach up to more than 300 DEG C, when the ion migration tube is washed, the time can be effectively shortened. The semiconductor heating ion migration tube structure for the ion migration spectrometry detector is simple in structure, low in cost and wider in application range.

Description

technical field [0001] The invention relates to the technical field of ion mobility spectrometry, in particular to the technical field of ion mobility spectrometry detection, in particular to a semiconductor heated ion mobility tube structure applied to an ion mobility spectrometer detector. Background technique [0002] Ion mobility spectrometry detection technology has been widely used in the field of trace trace detection. In particular, portable ion mobility spectrometers play their unique advantages in public security inspections. The ion transfer tube is one of the key components, and its performance determines the performance of the ion mobility spectrometer detector. The control of the heating method and temperature stability of the ion mobility tube is directly related to the power supply and the continuous use time of the ion mobility spectrometer detector. [0003] The traditional ion transfer tube heating method is to heat the ion tube through the electric heat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J49/02H05B3/42
Inventor 李震宇陈勇江洪
Owner THE THIRD RES INST OF MIN OF PUBLIC SECURITY