Method for simplifying etching and forming techniques for word line dielectric film in storage

Abstract

The invention provides a method for simplifying etching and forming techniques for a word line dielectric film in a storage. With the adoption of the method, the a one-time photoresist filling line and a one-time dry etching technique link are effectively reduced in the production for each wafer, so that the cost can be well lowered, and the efficiency of producing semi-conductor can be greatly improved.

Description

technical field [0001] The invention relates to a manufacturing process of a semiconductor device, specifically, to a process method for simplifying the etching and forming of a word line dielectric film in a memory. Background technique [0002] Such as figure 1 As shown, in the memory, the function of the word line is very important. The general structure of a memory cell is shown in the figure. The word line 1 connects the gate of the transistor 3. By selectively turning on and off the memory cell, the Controlling the charging and discharging of the capacitor 2. Another example figure 2 As shown, it is the basic schematic diagram of the memory, and the switch of the transistor 2 is controlled by the high and low levels of the word line 1, thereby realizing the control of the transistor switch. [0003] The existing word line dielectric film etching process such as Figures 3A-3F as shown in Figure 3A As shown in FIG. A part of the metal silicide on the upper surfa...

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