Data error correction method and device on flash storage medium

A technology of storage medium and error correction method, applied in the field of data storage, can solve problems such as increasing the complexity of user code, lack of error correction mechanism for key metadata, and data confusion.

Active Publication Date: 2015-08-26
DATANG MOBILE COMM EQUIP CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Existing solution 1 requires users to participate in the software development process to select versions, which is opaque to users, and the application layer guarantees the correctness of data, increases the complexity of user codes, and can only judge errors but not correct them.
[0014] The existing schemes 2 and 3 are essentially the same in terms of metadata, except that scheme 3 can support a more flexible sector management mechanism because it contains more metadata information, but they all have serious flaws in the data security scheme: first, for key The metadata itself has no error correction mechanism. When the metadata is wrong, it will cause serious consequences such as data confusion. Secondly, the ECC code itself has limited error correction capabilities. The size of each physical sector is 512 bytes (byte), which can only be corrected Limited number of bits, low error correction ratio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data error correction method and device on flash storage medium
  • Data error correction method and device on flash storage medium
  • Data error correction method and device on flash storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] This embodiment implements transparent storage and backup of user data. In order to realize data backup, the physical sector needs to be divided into two parts, one is the externally visible physical primary sector, and the other is the physical backup sector used for backup. Each physical primary sector has a unique corresponding physical backup sector. The physical backup sector is invisible to users. The physical backup sector and the physical primary sector have a fixed offset relationship on the flash.

[0050] Such as Figure 5A As shown, the data writing process is as follows:

[0051] Step 501: When the user needs to write data, allocate a physical master sector for the user data according to the size of the user data to be written, and at the same time allocate the right to use the physical backup sector corresponding to the physical master sector;

[0052] Step 502: Calculate the ECC code according to the sector size;

[0053] Step 503: Write the user data ...

Embodiment 2

[0070] This embodiment implements double backup of metadata.

[0071] Such as Figure 5C As shown, for a device with complex sector management, in addition to the ECC code being backed up as part of the metadata, it is also necessary to implement double backup of metadata for other metadata.

[0072] Such as Figure 5D As shown, the following process needs to be adopted for reading any metadata:

[0073] Step 521: read the first metadata from the physical master sector dedicated to saving metadata;

[0074] Step 522: Read the second metadata from the physical backup sector corresponding to the physical master sector dedicated to saving metadata;

[0075] Step 523: Perform self-error correction processing on the read first metadata and second metadata.

Embodiment 3

[0077] This embodiment describes the method adopted for self-correction of primary and secondary data.

[0078] Flash has the feature of erasing first and then writing. After erasing, the stored bit is read as 1, and after writing, 1 can be programmed as 0. This feature makes the bit flip on Flash from 1 to 0, so this is Provides a simple and effective method for data error correction, such as Figure 5E As shown, the error correction process is as follows:

[0079] Step 531: read data from the physical master sector, called master data;

[0080] Step 532: read data from the physical backup sector, called backup data;

[0081] Step 533: Perform a OR operation on the corresponding bits of the primary data and the backup data to obtain data after self-error correction processing. The bit-OR operation means that as long as one of the two bits is "1", the result of the bit-OR is "1", otherwise the result of the bit-OR is "0".

[0082] This error correction algorithm can correc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a data error correction method and a device on a flash storage medium and relates to the field of data storage. The data error correction method and the device on the flash storage medium are used for improving error correcting accuracy of data on the flash storage medium. Metadata which correspond to user data are written into a physical main sector and a physical backup sector. When the user data is read, the metadata in the physical main sector and the physical backup sector can conduct automatic error correction processing, and the metadata obtained by the automatic error correction processing conduct error correction to the user data. The data error correction method and the device on the flash storage medium can improve error correction accuracy of the data on the flash storage medium.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a data error correction method and device on a Flash storage medium. Background technique [0002] At present, Flash chips are widely used in various embedded devices, and their general uses include storing software versions, recording operation logs, etc. Due to the long-term and frequent use of the storage medium of the Flash chip, there is a certain error probability, and the error is manifested as a bit (bit) flip of the Flash chip, so it is necessary to provide necessary protection for the use requirements. [0003] There are also differences in data fault tolerance methods in different application scenarios. Three solutions are introduced below: [0004] First, for application scenarios that store software versions and have high reliability requirements, most existing solutions directly store two copies of software on the Flash chip, and use an algorithm to determine which vers...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/14G06F11/10
Inventor 笪禹李侠刘博强贺鑫
Owner DATANG MOBILE COMM EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap