Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of complex semiconductor device process, high electrical connection error rate, poor effect, etc.

Active Publication Date: 2015-12-09
MACRONIX INT CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, not only is it not conducive to the miniaturization of the overall device, but also complicates the process of the semiconductor device and increases the production cost.
Moreover, the failure rate of the electrical connection between metal oxide semiconductors and other semiconductor components will be relatively high, and the effect is not good

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] figure 1 is a top view showing a semiconductor structure 1 according to an embodiment of the present invention, such as figure 1 As shown, the semiconductor structure 1 includes a substrate 10 , a first semiconductor device 20 , a second semiconductor device 30 , a passive device 40 and an active device 50 . Only the structures of the first semiconductor element 20 , the second semiconductor element 30 , the passive element 40 and the active element 50 are shown here, and the connecting wires between the elements are omitted. In this embodiment, the first semiconductor device 20 , the second semiconductor device 30 , the passive device 40 and the active device 50 are disposed on a single substrate 10 .

[0035] Figure 2 to Figure 22 is shown as figure 1 The fabrication flow chart of the cross-section of the semiconductor structure 1 along the X-X tangent line. Please refer to figure 2 , a substrate 10 is provided, and the substrate 10 has a first region A1 and a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, an active element, a first semiconductor element, a second semiconductor element and a passive element. The substrate is provided with a first section and a second section which is connected with the first section. The active element is provided with a doping section which is located on the first section. The first semiconductor element, the second semiconductor element and the passive element are arranged on the second section. The first semiconductor element, the second semiconductor element and the passive element are in electrical connection with the active element.

Description

technical field [0001] The present invention relates to a semiconductor structure, and in particular to a semiconductor structure integrating active elements, multiple semiconductor elements and passive elements into a single substrate. Background technique [0002] In semiconductor devices, for example, metal oxide semiconductors and other semiconductor elements are required at the same time. Generally speaking, metal oxide semiconductors and other semiconductor elements are formed on different substrates in a separate process, and then in the packaging process, metal oxide semiconductors on different substrates and other semiconductor elements are formed by wire bonding. electrical connection. [0003] When a metal oxide semiconductor is integrated with a semiconductor device, a space for wire bonding needs to be reserved. If a metal oxide semiconductor is integrated with multiple semiconductor devices, more space for wire bonding needs to be reserved. Therefore, not on...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L21/82
Inventor 李明东陈建铨连士进
Owner MACRONIX INT CO LTD