Preparation method of mixed fluorescent film for broadband silicon-based detector
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- UNIV OF SHANGHAI FOR SCI & TECH
- Publication Date
- 2013-09-11
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to an ultraviolet enhanced coating technology, in particular to a preparation method of a mixed fluorescent film used for a wide-band silicon-based detector. Background technique
[0002] Since the light wave in the ultraviolet band has a very small penetration depth in polysilicon, general imaging devices such as CCD and CMOS have a weak response in the ultraviolet band. Since photodetectors such as CCD and CMOS were put into commercial production, people have been working hard to find a way to improve the ultraviolet response ability of the detector. In order to improve the sensitivity of the detector to ultraviolet radiation, a feasible way is to coat the device with a frequency conversion film that can convert ultraviolet light into visible light. There are many fluorescent substances, but substances that can convert UV and EUV light into visible light still need to meet certain conditions: First, their emission spectrum must...