Preparation method of mixed fluorescent film for broadband silicon-based detector

A detector and broadband technology, which is applied in the field of preparation of mixed fluorescent films, can solve the problems that frequency conversion films cannot achieve effective response sensitivity, weak response, etc. Effect
CN103289680AInactive Publication Date: 2013-09-11UNIV OF SHANGHAI FOR SCI & TECH

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF SHANGHAI FOR SCI & TECH
Publication Date
2013-09-11
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

The invention relates to a preparation method of a mixed fluorescent film for a broadband silicon-based detector, which comprises the following steps of: performing grinding pretreatment of Lumogen powder and Coronene powder respectively by use of an agate mortar, and then putting into a designated beaker; preparing a suspension colloidal solution by taking a toluene solution as a solvent and a nitrocotton colloidal solution as an adhesive; fetching a proper amount of the suspension colloidal solution, and dropwise adding on a photosensitive surface or quartz glass substrate; and meanwhile, performing vacuum adsorption of a sample on a spin coater, and performing spin coating to obtain a film. The preparation method does not damage the crystal structure characteristics of two fluorescent materials so as to guarantee the consistency of the luminescence characteristics of the two fluorescent materials before and after film formation; the film compensates for the defect of low quantum efficiency of a single fluorescent material at partial band; compared with the traditional thermal evaporation technology, the preparation technology is simple to operate, and the material utilization rate is remarkably improved; and the preparation method provided by the invention reduces the experimental cost, and is time-saving and efficient and favorable for the industrial development of a silicon-based imaging device.
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Description

technical field

[0001] The invention relates to an ultraviolet enhanced coating technology, in particular to a preparation method of a mixed fluorescent film used for a wide-band silicon-based detector. Background technique

[0002] Since the light wave in the ultraviolet band has a very small penetration depth in polysilicon, general imaging devices such as CCD and CMOS have a weak response in the ultraviolet band. Since photodetectors such as CCD and CMOS were put into commercial production, people have been working hard to find a way to improve the ultraviolet response ability of the detector. In order to improve the sensitivity of the detector to ultraviolet radiation, a feasible way is to coat the device with a frequency conversion film that can convert ultraviolet light into visible light. There are many fluorescent substances, but substances that can convert UV and EUV light into visible light still need to meet certain conditions: First, their emission spectrum must...

Claims

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