Unlock instant, AI-driven research and patent intelligence for your innovation.

Devices and methods for high-k and metal gate stacks

A gate stack, device technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2016-04-20
TAIWAN SEMICON MFG CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When forming multiple HK / Metal Gate (MG) FETs (such as p-type FET cores, n-type FET cores, input / output nFETs, input / output pFETs of HK / MG, and high resistors) on a single IC chip ), there is an integration problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Devices and methods for high-k and metal gate stacks
  • Devices and methods for high-k and metal gate stacks
  • Devices and methods for high-k and metal gate stacks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] It should be understood that the following disclosure provides many different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. Additionally, the present invention may repeat reference symbols and / or characters in multiple instances. This repetition is for simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and / or configurations described. Moreover, forming a first component over or on a second component in the following description may include embodiments in which the first component and the second component are in direct contact, and may also include that other components may be formed between the first component and the second component such that Embodiments in which the first part and the second p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device having five gate stacks on different regions of a substrate and methods of making the same are described. The device includes a semiconductor substrate and isolation features to separate the different regions on the substrate. The different regions include a p-type field-effect transistor (pFET) core region, an input / output pFET (pFET IO) region, an n-type field-effect transistor (nFET) core region, an input / output nFET (nFET IO) region, and a high-resistor region.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly, the present invention relates to a device and method for high-k and metal gate stacks. Background technique [0002] The semiconductor integrated circuit (IC) industry has undergone rapid development. Technological developments in IC materials and design have produced multiple generations of ICs, each new generation having smaller but more complex circuits than the previous generation. During the evolution of ICs, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component that can be produced using a fabrication process) has decreased. However, these developments have increased the complexity of the processing and manufacturing of ICs, and similar developments are required in the processing and manufacturing of ICs in order to realize these developments. The advantages of this sc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/808H01L21/337
CPCH01L21/823842H01L21/823857
Inventor 林俊铭吴伟成钟升镇杨宝如庄学理
Owner TAIWAN SEMICON MFG CO LTD