Distributed building blocks for r-c clamp circuits in the core region of a semiconductor die

Abstract

A semiconductor die includes a resistor-capacitor RC clamp circuit for electrostatic discharge (ESD) protection of the semiconductor die. The RC clamp circuit includes building blocks distributed in a pad ring and in a core area of ​​the semiconductor die. The building blocks include at least one capacitor block in the core region. The RC clamp circuit also includes chip level conductive layer connections between each of the distributed building blocks.

Description

technical field [0001] The present invention relates generally to semiconductor circuits that provide protection against potentially damaging excessive voltages, including, by way of example, excessive electrical overstress (EOS) and / or electrostatic discharge (ESD) events. Voltage. Background technique [0002] Modern integrated circuits (ICs) are susceptible to damage from excess voltage. Common sources of these potentially damaging voltages include electrical overstress (EOS) and electrostatic discharge (ESD). ESD, a serious problem in solid-state electronic devices, is the transfer of electrostatic charges between bodies or surfaces at different electrostatic potentials, either through direct contact or through induced electric fields. ICs constructed using semiconductors, such as silicon, and insulating materials, such as silicon dioxide, can be permanently damaged when subjected to higher voltages that can be generated by an ESD event. [0003] Traditionally, on-chi...

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Problems solved by technology

Each of these designs consumes a large portion of the chip's metal layers, greatly constraining routing options for the chip's other functional components

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