Supercharge Your Innovation With Domain-Expert AI Agents!

Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same

A semiconductor and doped region technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as damage, uncontrollable devices, breakdown, etc.

Active Publication Date: 2013-12-11
沃孚半导体公司
View PDF10 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, other problems can arise under reverse bias conditions
For example, as mentioned above, if the blocking voltage of the device is exceeded, the device can break down in an uncontrollable manner, which can damage or destroy the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
  • Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
  • Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] Embodiments of the invention will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout the drawings.

[0044] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device includes a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined, and a plurality of spaced apart doped regions within the active region. The plurality of doped regions have a second conductivity type that is opposite the first conductivity type and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of doped regions include a plurality of rows extending in a longitudinal direction. Each of the rows includes a plurality of longitudinally extending segments, and the longitudinally extending segments in a first row at least partially overlap the longitudinally extending segments in an adjacent row in a lateral direction that is perpendicular to the longitudinal direction.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation-in-part of U.S. Application No. 12 / 492,670, filed June 26, 2009, and entitled "Semiconductor Devices Including Schottky Diode Having Doped Regions Arranged As Islands And Methods Of Fabricating Same," which application No. 12 / 492,670 is a continuation of Application No. 11 / 496,842, filed August 1, 2006, and entitled "Semiconductor Devices Including Schottky Diodes With Controlled Breakdown And Methods Of Fabricating Same," both of which are assigned to the present Assignee of the application, the disclosures of both applications are hereby incorporated by reference in their entirety as if fully set forth herein. technical field [0003] The present invention relates to semiconductor devices and their fabrication, and more particularly to junction barrier Schottky (JBS) diodes and their fabrication. Background technique [0004] High voltage silicon carbide (SiC) Schottky diodes, whic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/28H01L21/44
CPCH01L21/046H01L21/0495H01L29/0619H01L29/0692H01L29/1608H01L29/6606H01L29/8611H01L29/872H01L21/28H01L21/44
Inventor 张清纯J·亨宁
Owner 沃孚半导体公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com