Method for monitoring edge thickness measurement stability of wafer

Abstract

A method for monitoring edge thickness measurement stability of a wafer comprises the steps that an oxide layer with a specific thickness is grown on the bare-chip wafer to manufacture a golden wafer; checkout equipment is used for scanning, and arithmetic mean is respectively carried out on the maximum value, the minimum value and the mean value of the edge thickness of the whole wafer obtained through the scanning of each time; in actual detection, the checkout equipment is used for scanning the golden wafer to obtain the edge thickness of the whole wafer; the absolute value of the difference of the maximum thickness reference value and the maximum thickness detection value is gained to be used as the maximum thickness deviation degree, the absolute value of the difference of the minimum thickness reference value and the minimum thickness detection value is gained to be used as the minimum thickness deviation degree, and the absolute value of the difference of the mean thickness reference value and the mean thickness detection value is gained to be used as the mean thickness detection value; whether the maximum thickness deviation degree is smaller than a first threshold value and smaller than a second threshold value and the mean thickness deviation degree is smaller than a third threshold value or not is judged, and the edge thickness measurement stability of the wafer is determined according to a judgment result.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for monitoring stability of wafer edge thickness measurement. Background technique [0002] With the development of integrated circuit technology and the continuous improvement of machine performance, factories pay more and more attention to the defects on the edge of wafers. Generally, the factory will use inspection equipment such as the CV300R inspection machine to inspect the wafer edge in process steps such as EBR (edge ​​ball removal, edge-bead rinsing) and WEE (Wafer edge exposure, wafer edge exposure). Finally, defect detection is carried out, which is a fast and effective method for quality monitoring of process steps. Therefore, it is very important to ensure the stability and accuracy of the testing machine itself. [0003] However, the self-detection method adopted by CV300R in the industry is too simple and cannot a...

AI Technical Summary

Problems solved by technology

Under this detection method, the detection results can only reflect the ability of the machine to capture granular defects, but cannot reflect the stability of wafer edge thickness detection

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