Preparation method of zinc oxide nano film, sensor electrode and electrochemical sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ANHUI NORMAL UNIV
- Publication Date
- 2014-02-12
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a preparation method of a zinc oxide nanometer film, an electrochemical sensor electrode and an electrochemical sensor. Background technique
[0002] ZnO (zinc oxide) is a compound semiconductor with wide bandgap and direct bandgap of group II-VI. It has a hexagonal brazeite structure and its bandgap width is about 3.37eV at room temperature. ZnO thin film has excellent performance in many aspects such as lattice, photoelectricity, piezoelectricity, gas sensitivity and pressure sensitivity, and has high thermal stability. It has been widely used in surface acoustic wave devices, solar cells, gas and pressure sensitive devices, etc. It also has great development potential in many fields such as ultraviolet detectors. Moreover, many manufacturing processes of ZnO thin film are compatible with integrated circuit technology, and can be integrated with various...