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Solar battery preparing method with TiO2 sensitized through Bi2S3 quantum dots

A technology for sensitization of solar cells and quantum dots, applied in the field of solar cells, can solve the problems of high price of In and unfriendly environment, and achieve the effect of avoiding damage and optimizing parameters of devices.

Inactive Publication Date: 2014-02-19
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, Cd and Pb are toxic substances and are not friendly to the environment, while In is expensive

Method used

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  • Solar battery preparing method with TiO2 sensitized through Bi2S3 quantum dots
  • Solar battery preparing method with TiO2 sensitized through Bi2S3 quantum dots
  • Solar battery preparing method with TiO2 sensitized through Bi2S3 quantum dots

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] A Bi in this embodiment 2 S 3 The preparation method of quantum dot sensitized solar cell, the preparation process steps are as follows:

[0028] (1) Scratch coating of Ti0 on FTO glass 2 slurry.

[0029] First, use a glass knife to cut the conductive glass into pieces of a certain size, clean them with acetone, ethanol, and deionized water, and then dry them with nitrogen for use.

[0030] Secondly, paste a layer of scotch tape on both ends of the clean FTO glass (the thickness of the tape is preferably about 50um in this embodiment), and the prepared TiO 2 Slurry (TiO 2 The diameter ...

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Abstract

The invention discloses a solar battery preparing method with TiO2 sensitized through Bi2S3 quantum dots. The method concretely includes the following steps that (1), TiO2 slurry is arranged on FTO glass in a knife coating mode through a knife-scraping method; (2), a TiO2 porous film is obtained through annealing; (3), a continuous ion layer is used for reaction and absorption on the TiO2 porous film to prepare the Bi2S3 quantum dots, and electrodes are formed; (4), an electrolyte is dropped in the middle of each electrode and then diffuses to a whole working part of each electrode by using the solution diffusion action; (5), the FTO glass with the platinum-plated surface is buckled on the working electrode, the platinum plated face of the FTO glass faces toward the working electrode, and the working electrode and the platinum counter electrode are clamped through a clamp to obtain a solar battery. The invention discloses a preparing method for the Bi2S3 quantum dots which serve as sensitization material to be applied to the solar battery sensitized through quantum dots. According to the solar battery preparing method with the TiO2 sensitized through the Bi2S3 quantum dots, the nontoxic Bi2S3 quantum dots are adopted as a sensitizing agent to prepare the solar battery sensitized through quantum dots.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to the preparation of quantum dots, and the application of the prepared quantum dots to quantum dot-sensitized solar cells. Background technique [0002] Effective use of solar energy is an urgent requirement to solve the two major problems of energy crisis and global warming. Quantum dot sensitized solar cell is a new type of solar cell that realizes photoelectric conversion by sensitizing the photoanode with quantum dots, and its theoretical efficiency can reach 44%. Compared with dye-sensitized solar cells, quantum dot-sensitized solar cells mainly have the following advantages: quantum dot scale can be adjusted; large extinction coefficient and intrinsic dipole; quantum yield can be greater than 1, etc. [0003] In quantum dot-sensitized solar cells, narrow-band semiconductors such as Cd-based (CdS, CdSe, CdTe), Pb-based (PbS, PbSe, PbTe), and In-based (InP, InA...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20
Inventor 高义华楚亮张军向法午张翔晖苏俊
Owner HUAZHONG UNIV OF SCI & TECH
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