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Metal bump and method of manufacturing same

A bump and under-bump metallization technology, used in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc.

Inactive Publication Date: 2014-03-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in a higher contact resistance (Rc)

Method used

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  • Metal bump and method of manufacturing same
  • Metal bump and method of manufacturing same
  • Metal bump and method of manufacturing same

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Embodiment Construction

[0032] The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0033] The present invention is described with reference to a preferred embodiment in a specific context, namely, a stepped bump structure for a bump-on-trace (BOT) assembly. However, the concepts of the present invention are also applicable to other semiconductor structures or circuits.

[0034] see now figure 1 , shows an embodiment of the stepped bump structure 10 . As shown, the stepped bump structure 10 includes a substrate 12, an insulating layer 14, a contact element 16, a passivation layer 18, a polyimide layer 20, an under bump metallization (UBM) feature 22, ...

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Abstract

The invention provides an embodiment of a bump structure which includes a contact element formed on a substrate; a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element; a polyimide layer overlying the passivation layer and having a polyimide opening exposing the contact element; an under bump metallurgy (UMB) feature electrically coupled to the contact element and having a UBM width; and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width. The invention also provides a method of forming a bump structure.

Description

[0001] Cross References to Related Applications [0002] This application claims U.S. Provisional Patent Application No. 61 / 707,644, filed September 28, 2012, entitled "Metal Bump and Method of Manufacturing Same," and filed September 18, 2012, entitled "Ladd Bump Structures and U.S. Provisional Patent Application No. 61 / 702,624 for Methods of Making the Same, U.S. Provisional Patent Application No. 61 / 707,609 for "Interconnection Structure Method of Forming Same," filed September 28, 2012, and U.S. Provisional Patent Application No. 61 / 707,609, filed September 28, 2012 Priority to U.S. Provisional Patent Application Serial No. 61 / 707,442, filed September 28, entitled "Bump Structure and Method of Forming Same," the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates generally to semiconductors, and more particularly to metal bump structures and methods of forming them. Background technique [0004] Typically...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L21/48
CPCH01L2224/81424H01L2224/13082H01L2224/13164H01L2224/13686H01L2224/13015H01L24/14H01L2224/13116H01L2224/13144H01L2224/13565H01L2224/13147H01L2224/13166H01L24/16H01L2224/14051H01L2224/13083H01L2224/81439H01L23/49811H01L2224/81191H01L24/11H01L2224/16238H01L2224/16503H01L2224/1357H01L2224/11472H01L21/4853H01L24/13H01L24/81H01L2224/81447H01L2224/13155H01L2224/81444H01L21/76885H01L2224/11462H01L2224/13017H01L2224/13111H01L2224/8181H01L2924/181H01L2224/1308H01L2224/13012H01L2224/05647H01L2224/13005Y10T29/49144H01L2224/13023H01L2224/11013H01L2224/1112H01L2224/0401H01L2224/05124H01L2224/81143H01L2224/81203H01L2224/81948H01L2224/13022H01L2224/13013H01L2224/13014H01L2924/00014H01L2924/014H01L2924/05432H01L2924/053H01L2924/00H01L2924/00012H01L2924/206H01L2924/207H01L21/70H01L2224/13551H01L2224/13582H01L2224/1369H01L2924/07025H01L2224/81007H01L2224/8192H01L2924/301H01L2224/16227H01L24/02H01L2224/02125H01L2224/02141H01L2224/02145H01L2224/0215H01L2224/10125H01L2224/11019H01L2224/13564H01L2224/136H01L2924/35H01L24/05H01L25/0657H01L25/50H01L2224/05114H01L2224/05147H01L2224/05155H01L2224/13026H01L2224/16148H01L2224/81895H01L2225/06513H01L2924/04941
Inventor 林彦良曾裕仁黄昶嘉郭庭豪陈承先
Owner TAIWAN SEMICON MFG CO LTD