1t1r array based on transparent rram gate-controlled thin film transistor and its preparation method

Abstract

The invention discloses a 1T1R array based on a transparent RRAM grid-control thin film transistor and a preparing method thereof. The 1T1R array comprises a logic circuit, a signal input circuit, a signal output circuit and a power source Vdd. The logic circuit comprises a 1T1R unit and a first transistor. The 1T1R unit comprises a resistance changing resistor and a second transistor. The logic circuit is connected with the signal input circuit and the signal output circuit. The complex logic function of the 1T1R array is achieved through the connecting relation between the transistors and the resistance changing resistor.

Description

technical field [0001] The invention relates to the technical field of information storage, and more specifically relates to a 1T1R array based on a transparent RRAM gate-controlled thin film transistor and a preparation method thereof. Background technique [0002] Resistive random access memory (resistive random access memory), that is, RRAM, as a new type of non-volatile memory, realizes high speed (<5ns), high density, low operating voltage (<1V), high Integration and other characteristics, it is a strong competitor for future semiconductor memory. Transparent RRAM devices generally have a metal-insulator-metal structure, by adding a layer of nickel oxide (NiO) and titanium oxide (TiO) between two layers of conductive metal. 2 ), hafnium oxide (HfO 2 ) or zirconia (ZrO 2 ) and other dielectric thin film materials with resistive properties, to realize the transformation of resistive materials between high and low resistance states, thereby realizing data erasing ...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is how to overcome the single function of 1T1R array and realize complex logic functions

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