Electrode of dry etching device and dry etching device
An electrode and equipment technology, applied in the field of electrodes and dry engraving equipment, can solve the problems of broken substrate 13, affecting the qualified rate of the substrate, etc., and achieve the effect of improving the qualified rate and improving the phenomenon of suction.
Active Publication Date: 2014-07-23
CHENGDU TIANMA MICROELECTRONICS +1
View PDF6 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The chip suction phenomenon may cause the substrate 13 to break and affect the qualified rate of the substrate
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0017] The present invention will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for ease of description, the drawings only show a part but not all of the content related to the present invention.
[0018] Figure 5 Is a top view of an electrode of a dry engraving device provided by an embodiment of the present invention, Image 6 Is the edge of the electrode of the dry engraving equipment provided by the embodiment of the present invention Figure 5 A schematic cross-sectional view of the middle AA'. The electrode of the dry engraving device provided in this embodiment refers to the lower electrode of the dry engraving device, which is also called the bottom electrode. Such as Figure 5 with Image 6 As shown, the electrode of the dry engraving device ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an electrode of a dry etching device and the dry etching device. The electrode comprises an electrode base; an insulating layer which is arranged on the electrode base; and an edge protruding stand which is positioned on the insulating layer and arranged in a way of surrounding the periphery of the insulating layer, and the edge protruding stand is provided with a cushion structure which is used for installing supporting rods of the dry etching device. The edge protruding stand comprises multiple protruding structures which are arranged on the edge protruding stand and surround the periphery of the edge protruding stand. The multiple protruding structures are arranged on the edge protruding stand of the electrode of the dry etching device and surround the periphery of the edge protruding stand so that a substrate is enabled to be provided with small gaps which are arranged between the multiple protruding structures and the edge protruding stand. Therefore, adhesive force between the substrate and the edge protruding stand is reduced, a piece suction phenomenon is effectively improved, substrate etching qualified rate is enhanced and the use cycle of the electrode of the dry etching device is increased.
Description
Technical field [0001] The embodiment of the present invention relates to dry engraving technology, in particular to an electrode of a dry engraving device and a dry engraving device. Background technique [0002] The dry etching (dry etching) process has become more and more mature in the photolithography process. The principle of the dry etching process is usually to use plasma discharge to etch away the metal film or non-metal film masked by a hard mask such as SiO2 on the substrate without photoresist or hard mask. The masked area is preserved, and the required pattern is formed on the substrate. [0003] Dry etching of the substrate is done in the reaction chamber of the dry etching equipment, figure 1 It is a schematic diagram of the reaction chamber of the dry engraving equipment in the prior art, such as figure 1 As shown, the reaction chamber of the dry etching equipment includes a cavity 10, an upper electrode 11 located on the cavity, and a lower electrode 12 located in...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/04
CPCH01J37/32724H01J37/32733H01J37/32715H01J37/32541
Inventor 季云龙郭晓龙华梓同杨冬
Owner CHENGDU TIANMA MICROELECTRONICS