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Storage elements with decoupled read/write paths

A technology of storage elements and paths, applied in the field of storage elements of read/write paths, can solve problems such as affecting the sensing operation and disadvantage

Active Publication Date: 2017-08-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, current will also flow through the conductive lines to non-selected storage elements and will adversely affect sensing operations that measure the value of the current flowing through the target storage element

Method used

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  • Storage elements with decoupled read/write paths
  • Storage elements with decoupled read/write paths
  • Storage elements with decoupled read/write paths

Examples

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Embodiment Construction

[0047] It is to be understood that the following disclosure provides many different embodiments or examples for implementing different features of the present invention. Specific examples of components or arrangements are described below to simplify the present disclosure. They are, of course, illustrative only and are not intended to limit the invention. In addition, the execution of the first processing before the second processing followed in the specification may include an embodiment in which the second processing is executed immediately after the first processing, and may also include an embodiment in which another processing is executed between the first and second processing. Example. Various features may also be arbitrarily drawn in different scales for simplicity and clarity. In addition, the formation of the first component over or on the second component may include embodiments where the first component is formed in direct contact with the second component, or ma...

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Abstract

The invention discloses a memory element with a decoupled read / write path, comprising a switch, a resistive switching device connected between the gate of the switch and a third line, and between the gate of the switch and the second line wherein the switch has a first terminal connected to the first line and a second terminal connected to the second line.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more particularly, to a storage element with a decoupled read / write path. Background technique [0002] Smaller devices with larger memory capacities are increasingly required. Several efforts have been initiated in the field of resistive memories as a mechanism to create greater storage capacity in less space. Resistive memory systems use resistive elements that can change and maintain their resistance value based on applied conditions. For example, a logic "1" may be represented using a high resistance state and a logic "0" may be represented using a low resistance state. [0003] Such resistive memory elements are often constructed as an array of memory elements, with each element arranged on intersecting conductive lines. To set or read the state of a particular storage element in the array, a conductive line connected to that storage element is selected. The selected l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/02
CPCG11C11/1673G11C11/1675G11C13/0007G11C13/003G11C13/004G11C13/0069G11C2213/32G11C2213/79G11C2213/82G11C11/1659G11C11/1693G11C7/02G11C7/10G11C13/00G11C13/0002
Inventor 丁裕伟黄国钦蔡竣扬
Owner TAIWAN SEMICON MFG CO LTD