Nonvolatile resistive memory element with an integrated oxygen isolation structure

Abstract

A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and / or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and / or operation of the memory device.

Description

BACKGROUND[0001]1. Field of the Invention[0002]This invention relates to nonvolatile resistive memory elements, and more particularly, to a nonvolatile resistive memory element with an integrated oxygen isolation structure and methods for forming the same.[0003]2. Description of the Related Art[0004]Nonvolatile memory elements are used in devices requiring persistent data storage, such as digital cameras and digital music players, as well as in computer systems. Electrically-erasable programmable read only memory (EPROM) and NAND flash are nonvolatile memory technologies currently in use. However, as device dimensions shrink, scaling issues pose challenges for traditional nonvolatile memory technology. This has led to the investigation of alternative nonvolatile memory technologies, including resistive switching nonvolatile memory.[0005]Resistive switching nonvolatile memory is formed using memory elements that are bistable, i.e., having two stable states with different resistances....

AI Technical Summary

Problems solved by technology

However, as device dimensions shrink, scaling issues pose challenges for traditional nonvolatile memory technology.

However, such bistable memory elements are more sensitive to oxygen migration during fabrication and / or operation, since the migration of even a very small number of mobile oxygen ions into such memory elements can significantly alter the performance and longevity of the memory element.

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