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IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof

A technology for encapsulating modules and sub-molds, applied in electrical components, electrical solid devices, circuits, etc., can solve the problem of inconsistent stray parameters of auxiliary emitter loops, and achieve multi-chip parallel current sharing characteristics, ensuring switching consistency, The effect of optimizing the configuration

Active Publication Date: 2015-11-11
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] One of the purposes of the present invention is to provide an IGBT sub-module unit and its packaging module to solve the technical problem of inconsistent stray parameters of the auxiliary emitter circuit in the existing IGBT packaging structure

Method used

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  • IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof
  • IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof
  • IGBT (Insulated Gate Bipolar Translator) sub-module unit and packaging module thereof

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Embodiment Construction

[0037] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0038] An embodiment of the present invention provides an IGBT sub-module unit, such as figure 1 shown and figure 2 As shown, the sub-module unit includes: an IGBT chip 1 , an emitter molybdenum sheet 2 , a collector molybdenum sheet 3 , a first conductive member 4 and a mounting base 5 .

[0039] One side of the emitter molybdenum sheet 2 is in contact with the emitter 71 of the IGBT chip 1, and one side ...

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) sub-module unit and a packaging module thereof, belongs to the technical field of semiconductor device packaging, and solves the technical problem that stray parameters of an auxiliary emitter electrode loop in a conventional crimping type IGBT packaging structure are not consistent. The IGBT sub-module unit comprises an IGBT chip, an emitter electrode molybdenum sheet, a collector electrode molybdenum sheet, a first conductive piece and a mounting base, wherein one surface of the emitter electrode molybdenum sheet is partially contacted with an emitter electrode of the IGBT chip; one surface of the collector electrode molybdenum sheet is contacted with a collector electrode of the IGBT chip; one end of the first conductive piece is contacted with the emitter electrode of the IGBT chip; and the mounting base is provided with a first hole for accommodating the emitter electrode molybdenum sheet and a second hole for allowing the first conductive piece to pass through, and the edge of the first hole of the mounting base is also provided with a clamp connection part.

Description

technical field [0001] The invention relates to the technical field of semiconductor device packaging, in particular to an IGBT sub-module unit and a packaging module thereof. Background technique [0002] Nowadays, as a mainstream switching device, IGBT has diversified packaging methods. At present, there are two commonly used types: plastic-encapsulated module type and press-fit type. In a typical packaging structure of an existing crimp-type IGBT, an IGBT chip is arranged in an IGBT sub-module unit, and a plurality of IGBT sub-module units are arranged in a ceramic casing. The gates, emitters, auxiliary emitters and collectors of multiple IGBT chips are connected to the outside of the ceramic tube shell to connect with other devices. Wherein the auxiliary emitter of the IGBT chip and the gate lead are connected to the gate drive circuit. [0003] In the existing IGBT package structure, since the auxiliary emitter of the IGBT chip is connected to the external auxiliary e...

Claims

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Application Information

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IPC IPC(8): H01L25/07H01L23/48
Inventor 刘国友窦泽春彭勇殿李继鲁肖红秀方杰常桂钦忻兰苑徐凝华王世平
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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