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Light Emitting Diodes with Improved Electrostatic Discharge Characteristics

A technology of light-emitting diodes and active regions, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the deterioration of the electrical characteristics of light-emitting diodes, and achieve the effect of improving electrostatic discharge characteristics and preventing leakage

Active Publication Date: 2018-09-25
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as described above, the carriers generated by high-concentration doping tend to move into the active region 17, so the leakage current of the light-emitting diode increases and the electrical characteristics of the light-emitting diode deteriorate.

Method used

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  • Light Emitting Diodes with Improved Electrostatic Discharge Characteristics
  • Light Emitting Diodes with Improved Electrostatic Discharge Characteristics
  • Light Emitting Diodes with Improved Electrostatic Discharge Characteristics

Examples

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experiment example

[0052] Using metal organic chemical vapor deposition MOCVD equipment to grow the epitaxial layer and produce about 600×600μm 2 size LEDs. Making other conditions the same, Comparative Example 1 doped the first barrier layer less than 1×10 19 / cm 3 Si, Comparative Example 2 doped the first barrier layer with about 1×10 19 / cm 3 Si, Comparative Example 3 doped the first barrier layer with 1.5×10 19 / cm 3 In the embodiment, a bandgap adjustment layer 16w (quasi-well layer) with an In content approximately 4% less than that of the well layer 17w is formed before the first barrier layer, and the bandgap adjustment layer 16w is doped with about 1.5×10 19 / cm 3 Si.

[0053] At the wafer level, the reverse current Ir (@-5V) did not show a large difference among Comparative Example 1, Comparative Example 2, and Examples, but Comparative Example 3 showed a reverse current value more than ten times that of Comparative Example 1. At the chip level, the reverse current Ir (@-5V) di...

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Abstract

The present invention discloses a light emitting diode with improved electrostatic discharge characteristics. The light emitting diode comprises: an n-type contact layer; a p-type contact layer; an active region, which is interposed between the n-type contact layer and the p-type contact layer, and includes a barrier layer and a well layer; The carrier retaining region is positioned adjacent to the active region between the n-type contact layer and the active region. The carrier retention region has a bandgap adjustment layer with an adjusted energy bandgap in order to prevent carriers inside the carrier retention region from diffusing into the active region. Accordingly, a light emitting diode having improved electrostatic discharge characteristics while preventing leakage can be provided.

Description

technical field [0001] The present invention relates to a light emitting diode, and more particularly, to a light emitting diode with improved electrostatic discharge characteristics. Background technique [0002] Generally, gallium nitride-based semiconductors are widely used in ultraviolet light, blue / green light emitting diodes or laser diodes as light sources for full-color displays, traffic lights, general lighting and optical communication equipment. This gallium nitride-based light-emitting device includes an active layer of an InGaN-based multi-quantum well structure located between n-type and p-type gallium nitride-based semiconductor layers. [0003] figure 1 is a cross-sectional view for explaining a conventional light-emitting diode, figure 2 is enlarged figure 1 A cross-sectional view of the active region, image 3 is for illustration figure 1 A rough energy band diagram of the energy band gap of a light-emitting diode. [0004] refer to figure 1 and f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/04H01L33/06
CPCH01L33/06H01L33/32H01L33/04H01L33/14
Inventor 尹俊皓
Owner SEOUL VIOSYS CO LTD