A kind of radio frequency identification label preparation method based on film technology

A technology of radio frequency identification tags and thin film technology, which is applied in the field of semiconductor integrated circuits, can solve the problems of large and difficult radio frequency identification tags, and achieve the effects of increasing the application range, reducing costs, and reducing costs

Active Publication Date: 2018-09-14
王磊 +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But for radio frequency identification tags, it generally includes four parts: antenna, analog front-end circuit, clock and digital logic circuit and EEPROM storage circuit, and for thin film technology, it is used to prepare analog front-end circuit and clock and digital logic The structure of the conventional thin film transistor of the circuit is quite different from the structure of the storage thin film transistor used to prepare the storage device, so it is difficult to integrate the two on the same substrate with the same process, that is, in the same It is very difficult to integrate an RFID tag including antenna, analog front-end circuit, clock and digital logic circuit and EEPROM storage circuit on a substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of radio frequency identification label preparation method based on film technology
  • A kind of radio frequency identification label preparation method based on film technology
  • A kind of radio frequency identification label preparation method based on film technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] A method for preparing a radio frequency identification tag based on thin film technology. The radio frequency identification tag consists of an antenna, an analog front-end circuit, a clock and a digital logic circuit, and an EEPROM storage circuit. The EEPROM storage circuit includes a storage device and a peripheral read-write circuit. Among them, the analog front-end circuit, clock and digital logic circuit, and EEPROM peripheral read-write circuit are composed of conventional thin-film transistors, while the EEPROM storage device is composed of storage thin-film transistors. Conventional thin-film transistors adopt an etch-stop structure, such as figure 1 As shown, the substrate 1 is a glass substrate or a flexible substrate, the gate electrode 2 is made of conventional Mo, deposited by physical sputtering, and patterned by wet etching, and its thickness is 200nm; the gate insulating layer is made of SiNx / SiO 2 Stacked structure (including 3, 4, 5 and 6), using pla...

Embodiment 2

[0065] Embodiment 2 is a method for preparing a radio frequency identification tag based on a thin film process. The radio frequency identification tag is composed of an antenna, an analog front-end circuit, a clock and a digital logic circuit. Among them, the analog front-end circuit, the clock and the digital logic circuit are composed of conventional thin film transistors. Conventional thin-film transistors adopt an etch-stop structure, such as figure 1 As shown, the substrate 1 is a glass substrate, the gate electrode 2 is made of conventional Mo, deposited by physical sputtering, and patterned by wet etching, and its thickness is 200nm; the gate insulating layer is made of SiNx / SiO 2 Stacked structure (including 3, 4, 5 and 6), using plasma enhanced chemical vapor deposition, dry etching patterning, wherein the thickness of SiNx is 250nm, SiO 2 The thickness of the active layer 7 is 50nm; the active layer 7 is made of semiconductor material, deposited by radio frequency ...

Embodiment 3

[0072] Embodiment 3 is a method for preparing a radio frequency identification tag based on a thin film process. The radio frequency identification tag consists of an analog front-end circuit, a clock and a digital logic circuit, and an EEPROM storage circuit. The EEPROM storage circuit includes a storage device and a peripheral read-write circuit. Among them, the analog front-end circuit, clock and digital logic circuit, and EEPROM peripheral read-write circuit are composed of conventional thin-film transistors, while the EEPROM storage device is composed of storage thin-film transistors. Conventional thin-film transistors adopt an etch-stop structure, such as figure 1 As shown, the substrate 1 is a glass substrate, the gate electrode 2 is made of conventional Mo, deposited by physical sputtering, and patterned by wet etching, and its thickness is 200nm; the gate insulating layer is made of SiNx / SiO 2 Stacked structure (including 3, 4, 5 and 6), using plasma enhanced chemical...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A film process-based preparation method for a radio frequency identification tag, wherein the radio frequency identification tag mainly comprises an antenna, an analog front end, a clock and digital logic circuit, and an EEPROM memory circuit, wherein the EEPROM memory circuit comprises a storage device and a peripheral read and write circuit, the antenna mainly comprises metal coils, the analog front end and the clock and digital logic circuit comprise conventional thin film transistors, and the EEPROM memory circuit mainly comprises conventional thin film transistors and memory thin film transistors. Provided is a method that employs the film process to integrally prepares, on the same substrate, the entire radio frequency identification tag comprising four parts: an antenna, an analog front end, a clock and digital logic circuit, and an EEPROM memory circuit. The method is capable of overcoming the drawbacks of traditional RFID tags, wherein, among others, the cost of integration between IC chips and external antennae is high, and the process is complex, thereby reducing costs.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a method for preparing a radio frequency identification tag based on a thin film process. Background technique [0002] Radio Frequency Identification (RFID: Radio Frequency Identification) is a key technology to realize the Internet of Things, widely used in various industries such as production, retail, logistics, transportation, and finance. A typical RFID system architecture is mainly composed of three parts: application system, reader and RFID tag. The application system is responsible for data processing, transmission and control. The reader is mainly responsible for two-way communication with the electronic tag, and at the same time accepts control instructions from the application system. The RFID tag has a unique electronic code and stores the relevant information of the identified object, and is the real data carrier of the radio frequency id...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06K19/077
CPCG06K19/067G06K19/077H01L29/786
Inventor 吴为敬夏兴衡李冠明张立荣周雷徐苗王磊彭俊彪
Owner 王磊
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products