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Method for improving thickness stability of low-dielectric film

A low-dielectric, stable technology, used in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor stability of low-dielectric film thickness

Active Publication Date: 2016-02-03
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem of poor stability of low-dielectric film thickness in the prior art, the present invention provides a method for improving the stability of low-dielectric film thickness, so as to improve the stability of film thickness

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  • Method for improving thickness stability of low-dielectric film
  • Method for improving thickness stability of low-dielectric film
  • Method for improving thickness stability of low-dielectric film

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Embodiment Construction

[0030] It should be noted that, in the case of no conflict, the following technical solutions and technical features can be combined with each other.

[0031] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0032] In the present invention, the number of silicon wafers remaining in the unfinished process is taken as one of the input inspection conditions, and the input inspection conditions are increased to avoid some waiting situations in the process chamber.

[0033] Figure 4 It is a schematic diagram of an embodiment of a method for improving the stability of a low-dielectric film thickness in the present invention; as Figure 4 As shown, the present embodiment is a method for improving the stability of low-dielectric film thickness. The method includes: step S1: check the number of silicon wafers that have not completed the process in the previous task of the film forming equipment; step S2: remo...

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Abstract

The invention relates to the field of semiconductors, and especially relates to a method for improving the thickness stability of a low-dielectric film. The method for improving the thickness stability of a low-dielectric film comprises the following steps: step S1, checking the number of silicon wafers not processed in a previous task of film forming equipment; step S2, comparing the number of silicon wafers not processed with a preset number; and step S3, when the number of silicon wafers not processed is greater than the preset number, generating next task, and making the silicon wafers enter the film forming equipment for a film forming process.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for improving the stability of low dielectric film thickness. Background technique [0002] Low dielectric (Lowk) film is mainly used for the dielectric layer in the back section. Generally, octamethylsilyl ether (OMCTS) and oxygen (O2) are used as the main reactants to form a film. Octamethylsilyl ether is used at room temperature and pressure The bottom is a liquid state, and the film-forming reaction is very sensitive to temperature. [0003] ProducerGT equipment is a mature product used by AMAT in the Lowk process. The last program of the previous task (Lastjob) of the process chamber (processchamber), such as the process of the second task (job) when the recipe (Recipe), the cleaning (clean) process or the deposition (deposition) process is about to end Sequence (sequence) (the following are the same sequence) silicon wafer (wafer) input inspection (trackin) process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31
CPCH01L21/02107H01L21/02299
Inventor 钟飞沈剑平李锦山王科韩晓刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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