Method for determining composite parameter that characterizes adhesion of thin film based on cohesion model

A technology of film adhesion and cohesion, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of insufficient reliability margin of measurement results, film damage, etc., to achieve a clear and clear parameter determination process, reduce Work complexity and effect of ensuring reliability margin

Inactive Publication Date: 2016-06-08
TIANJIN UNIV
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Problems solved by technology

However, these methods will cause damage to the film, and the reliability margin of the measurement results is not sufficient

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  • Method for determining composite parameter that characterizes adhesion of thin film based on cohesion model
  • Method for determining composite parameter that characterizes adhesion of thin film based on cohesion model
  • Method for determining composite parameter that characterizes adhesion of thin film based on cohesion model

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Embodiment Construction

[0020] The method of the present invention will be described in detail below.

[0021] 1) The adhesion between the film and the substrate can be expressed by the relationship between the adhesion force between the interfaces and the relative displacement of the interface, and the adhesion force between the interfaces changes with the relative distance of the material interface, This functional relationship can be described by the cohesion model. This relationship is represented by the potential function of the exponential cohesion model proposed by Xu and Needleman:

[0022] φ ( Δ ) = exp { σ m a x δ n [ 1 - ( 1 + Δ n δ ...

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Abstract

The present invention relates to a method for determining a composite parameter that characterizes adhesion of a thin film based on a cohesion model. The method comprises: representing adhesion between a thin film and a substrate by using a relation between an adhesive force between interfaces and an interface relative displacement, wherein the adhesive force between the interfaces changes as a relative distance of a material interface changes, and establishing a potential function of an exponential cohesion model to characterize an adhesion condition between the thin film and the substrate; using the exponential cohesion model as a constitutive model of a thin-film substrate interface unit in a thin-film substrate structure, and establishing a finite element model considering interface adhesion, wherein the model comprises two parts: the thin film and the substrate, and a cohesive unit is added between the thin film and the substrate; and performing interface adhesion sensitivity analysis on a composite parameter, so as to determine a key parameter. According to the method provided by the present invention, the key parameter sensitive to interface adhesion can be simply and conveniently determined.

Description

technical field [0001] The invention belongs to the technical field of ultrasonic surface wave technology and thin film characteristic characterization. Background technique [0002] The rapid development of ultra-large-scale integration (ULSI) has brought greater challenges to the ULSI interconnection and routing system. In the International Technology Roadmap for Semiconductors (ITRS), it is pointed out that in order to correctly characterize parameters such as mechanical properties and adhesion properties of low-k interconnect films, advanced testing techniques need to be developed. The adhesion of the interconnect film is a critical factor in the chemical mechanical polishing (CMP) process in the integrated circuit production process, the reliability of the product, and the life of the product. In terms of film adhesion detection, traditionally commonly used methods include scratching method, four-point bending method, sticking method, stretching method and so on. Howe...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/23G06F30/367
Inventor 肖夏戚海洋
Owner TIANJIN UNIV
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