Memory cell programming method, memory control circuit unit and memory apparatus

A memory unit and programming method technology, applied in the field of memory control circuit units and storage devices, can solve problems such as data abnormality, loss, and widening of critical voltage distribution, and achieve the effect of prolonging life

Active Publication Date: 2016-07-13
PHISON ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] During the programming process, the memory cell will age with the repeated injection and removal of electrons, resulting in an increase in the electron writing speed and a widening of the critical voltage distribution.
Therefore, after many times of programming, the memory cell may not be correctly identified as its storage state, resulting in erroneous bits
In addition, when the data stored in the same storage unit is read multiple times, for example, between 100,000 and 1 million times, it is very likely that the read data is wrong, and even this is The data stored in the physical erasing unit read multiple times will be abnormal or lost

Method used

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  • Memory cell programming method, memory control circuit unit and memory apparatus
  • Memory cell programming method, memory control circuit unit and memory apparatus
  • Memory cell programming method, memory control circuit unit and memory apparatus

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Embodiment Construction

[0113] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0114] figure 1 It is a schematic structural diagram of a host system and a memory storage device according to an exemplary embodiment.

[0115] Please refer to figure 1 , the host system 1000 generally includes a computer 1100 and an input / output (input / output, I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM for short) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / output device 1106 includes such as figure 2 ( figure 2 Is a schematic diagram of a computer, input / output devices and memory storage devices) mouse 1202, keyboard 1204, disp...

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Abstract

The invention provides a memory cell programming method, a memory control circuit unit and a memory apparatus. The memory cell programming method comprises the following steps: dividing the entity erasing unit of a rewritable nonvolatile memory module into a first region and a second region, wherein a first group of programming parameters is preset to be used for writing first type data into a lower entity programming unit belonging to the entity erasing unit of the first region, and the upper entity programming unit of the entity erasing unit of the first region is not used to store data; adjusting the first group of programming parameters to obtain a second group of programming parameters; and writing second type data into the lower entity programming unit belonging to the entity erasing unit of the second region by using the second group of programming parameters, wherein the upper entity programming parameters of the entity erasing unit of the second region is not used to store the data.

Description

technical field [0001] The present invention relates to a storage unit programming method, and in particular to a storage unit programming method for a rewritable non-volatile memory module, a memory control circuit unit and a storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, and fast read and write speed, it is most suitable for portable electronic products, such as notebooks. A solid state drive is a memory storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] With the advancement of semiconductor manufacturing process, the current technology has develo...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G11C16/10
Inventor林纬许祐诚
OwnerPHISON ELECTRONICS