Fin field effect transistor (finfet) device structure

Abstract

Methods for forming the fin field effect transistor (FinFET) device structure are provided. The method includes forming first fin structures and second fin structures on a first region and a second region of a substrate, respectively, and a number of the first fin structures is greater than a number of the second fin structures. The method also includes forming a sacrificial layer on the first fin structures and the second fin structures and performing an etching process to the sacrificial layer to form an isolation structure on the substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Application Serial No. 62 / 138,742, filed March 26, 2015, entitled "Fin field effect transistor (FinFET) device structure," the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to the field of semiconductors, and more particularly, to a Fin Field Effect Transistor and a forming method thereof. Background technique [0004] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and layers of semiconductor material over a semiconductor substrate, and patterning the various material layers using photolithography to form circuit components and elements on the semiconductor devi...

AI Technical Summary

Problems solved by technology

[0006] Although existing FinFET devices and methods of fabricating FinFET devices have generally served their intended purpose, they are not entirely satisfactory in every respect

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