Modeling method for physical model of gate-commutated thyristor for circuit simulation

Abstract

Disclosed is a modeling method for a gate pole current conversion thyristor physical model used for circuit simulation. The modeling method comprises the steps of 1, establishing an N base region sub model based on an improved Fourier series method by considering injection state change of excess carriers; 2, establishing a P base region sub model by adopting a hyperbolic sine method; 3, establishing an N buffer layer sub model by adopting a quasi-static method; 4, establishing a voltage-bearing sub region according to voltage reduction of the sub regions in each region and PN junctions of adjacent regions; and 5, establishing the gate pole current conversion thyristor physical model according to the sub models obtained in the steps 1-4. According to the modeling method, the modeling method for the sub models in each region is deduced through theory based on the operating characteristic of the carriers in each region in the gate pole current conversion thyristor; and meanwhile, by combination with boundary conditions of each region, the complete gate pole current conversion thyristor physical model is established.

Description

technical field [0001] The invention relates to a method for modeling a physical model of a gate commutation thyristor. Background technique [0002] The integrated gate commutated thyristor (IGCT) is composed of the core device gate commutated thyristor (GCT) and the integrated gate circuit. On the basis of the gate turn-off thyristor, the Transparent anode, buffer layer structure, integrated gate and other technologies enable IGCT to have the dual advantages of both transistors and thyristors. It has the characteristics of strong flow capacity, low on-state voltage drop, and fast switching speed. The attention of scientific research workers has been widely used in large-capacity power electronic converter devices. But up to now, none of the commercial software power device model libraries that are widely used in the field of power electronics includes IGCT and GCT models, which sets up obstacles for the corresponding simulation work including IGCT converters. Therefore, i...

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Problems solved by technology

[0004] The existing technology does not consider the change of the injection state of the N-base non-depletion region with the GCT operating characteristics in the key modeling area of ​​the GCT model, and the calculation method of the depletion region voltage drop in the N-base region is difficult to take into account the shutdown capability of the high-power GCT model and turn-off transient terminal voltage V AK Accuracy, in order to overcome the disadvantages of imperfect modeling methods and insufficient model accuracy in the prior art, and meet the needs of high-precision GCT physical models, the present invention proposes a gate-commutated thyristor (GCT) physical model modeling suitable for circuit simulation method, the present invention has higher precision than the existing Fourier series model

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