Solar photovoltaic power generation device of frame through-conductor type

A solar photovoltaic and power generation device technology, applied in photovoltaic power generation, photovoltaic power stations, photovoltaic modules, etc., can solve the problems of low energy conversion rate, large occupation area, functional limitations, etc., achieve high photoelectric conversion rate, small footprint, The effect of improving the energy conversion rate

Inactive Publication Date: 2017-02-22
湖北扬天节能环保股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the existing solar photovoltaic power generation devices have limited functions, and the energy conversion rate is low, occupying a large area, and the cost is high

Method used

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  • Solar photovoltaic power generation device of frame through-conductor type
  • Solar photovoltaic power generation device of frame through-conductor type

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Embodiment Construction

[0015] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0016] see Figure 1-2 , the present invention provides a technical solution: a frame threading type solar photovoltaic power generation device, comprising a photovoltaic power generation board 4, an aluminum frame 1 is provided on the top of the photovoltaic power generation board 4, and an aluminum frame 1 is provided on the bottom of the photovoltaic power generation board 4. Inverter 5, the top of the photovoltaic power generation panel 4 is provided with ...

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Abstract

The invention discloses a solar photovoltaic power generation device of a frame through-conductor type, and the device comprises a photovoltaic power generation plate. The top of the photovoltaic power generation plate is provided with an aluminum frame, and the bottom of the photovoltaic power generation plate is provided with an inverter. The top of the photovoltaic power generation plate is provided with a solar cell panel, and the bottom of the photovoltaic power generation plate is provided with a support. The bottom of the support is provided with a support strut, and the top of the support is provided with a fixed groove. One side of the fixed groove is provided with a fixing screw. The top of the solar cell panel is provided with a tempered glass cover plate, and the bottom of the tempered glass cover plate is provided with an EVA filling material. The device provided by the invention is small in investment, is quick in construction, is small in occupied area, is high in photoelectric conversion efficiency, has full cleanness, absolute safety, relative universality, definite long service life, maintenance-free performance, sufficient resources and potential economical efficiency, and is good in application prospect.

Description

technical field [0001] The invention relates to the technical field of photovoltaic power generation equipment, in particular to a frame threading type solar photovoltaic power generation device. Background technique [0002] The so-called photovoltaic power generation equipment, of course, refers to a device that directly converts light energy into electrical energy by using the photovoltaic effect of the semiconductor interface. The main principle of photovoltaic power generation is the photoelectric effect of semiconductors. It is completely absorbed by a certain electron in the metal. The energy absorbed by the electron is large enough to overcome the internal gravitational force of the metal and do work. It escapes from the metal surface and becomes a photoelectron. Silicon atoms have four outer electrons. If five electrons are mixed in pure silicon An atom with three outer electrons, such as a phosphorus atom, becomes an N-type semiconductor. If an atom with three oute...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02S10/00H02S40/36H02S30/10H02S20/00H01L31/02H01L31/048
CPCH01L31/0201H01L31/048H02S10/00H02S20/00H02S30/10H02S40/36Y02A30/14Y02E10/50
Inventor 黄军胜王襄鲍连升姚锋
Owner 湖北扬天节能环保股份有限公司
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