A heterojunction solar cell

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problem of small effective absorption area, achieve the effect of increasing effective absorption area, increasing fine grid spacing, and reducing distance

Active Publication Date: 2019-04-23
GOLD STONE (FUJIAN) ENERGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above problems, the present invention provides a heterojunction solar cell, which solves the shortcoming of the current n-type monocrystalline silicon substrate solar cell with a p-type amorphous silicon thin film layer as the light-receiving surface with a small effective absorption area

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  • A heterojunction solar cell
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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0019] Such as Figure 1~2 As shown, the present invention provides a heterojunction solar cell, which includes: an n-type monocrystalline silicon wafer 1; a first intrinsic amorphous silicon thin film layer 2 disposed on the light-receiving surface of the n-type monocrystalline silicon wafer 1 ; Be located at the n-type amorphous silicon thin film layer 3 on the first intrinsic amorphous silicon thin film layer 2; Be located at the first transparent conductive thin film layer 4 on the n-type amorphous silicon thin film layer 3; Be located at the first The metal grid line positive electrode 5 on t...

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Abstract

The invention discloses a heterojunction solar cell, which comprises an n-type monocrystalline silicon wafer, a first intrinsic amorphous silicon film layer arranged on the light-receiving surface of the n-type monocrystalline silicon wafer, an n-type amorphous silicon film layer arranged on the first intrinsic amorphous silicon film layer, a first transparent conductive film layer arranged on the n-type amorphous silicon film layer, a metal gate positive electrode arranged on the first transparent conductive film layer, a second intrinsic amorphous silicon film layer arranged on the shady surface of the n-type monocrystalline silicon wafer, a p-type amorphous silicon film layer arranged on the second intrinsic amorphous silicon film layer, a second transparent conductive film layer arranged on the p-type amorphous silicon film layer, and a metal gate back electrode arranged on the second transparent conductive film layer. The effective absorption area of the cell is increased, the short circuit current of the cell is thus increased, the cell conversion rate is further improved, and the cell conversion efficiency can be effectively enhanced by more than 1%.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a heterojunction solar cell. Background technique [0002] A solar cell is a semiconductor device that can convert solar energy into electrical energy. Under the condition of light, a photogenerated current will be generated inside the solar cell, and the electrical energy will be output through the electrodes. In recent years, the production technology of solar cells has been continuously improved, the production cost has been continuously reduced, and the conversion efficiency has been continuously improved. The application of solar cell power generation has become increasingly widespread and has become an important energy source for power supply. [0003] Heterojunction solar cells are one of the new high-efficiency cell technologies, which combine the advantages of monocrystalline silicon solar cells and amorphous silicon solar cells, and have the characteristics of low preparation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224
CPCH01L31/022425H01L31/022466Y02E10/50
Inventor 杨与胜王树林张超华庄辉虎罗骞宋广华
Owner GOLD STONE (FUJIAN) ENERGY CO LTD
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