Silicon-based ingaas channel double-gate cmos device

Abstract

The invention provides a silicon-based InGaAs channel dual gate COMS device. According to the invention, the device integrates a silicon-based semiconductor material and an InGaAs channel dual gate CMOS device by using the medium bonding method so as to increase the level of heterogeneous integration of the CMOS device. The dual gate structure also achieves reduction in power consumption of the device. The device makes it easy to adjust the threshold voltage thereof.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon-based InGaAs channel double-gate CMOS device. Background technique [0002] Since the development of integrated circuits, hundreds of millions of transistors can be integrated on silicon wafers. The power consumption and thermal effect of a single device have become the key factors restricting the development of integrated circuits. Integrating CMOS devices on silicon-based semiconductors has become a current research focus and technology frontier. However, the current InGaAs CMOS devices face two major problems: 1) heterogeneous integration of InGaAs CMOS devices and silicon substrates; 2) power consumption of CMOS devices after integration. To this end, it is necessary to improve the heterogeneous integration of InGaAs CMOS devices and silicon substrates, and to achieve low power consumption performance of the devices. Contents of the invention [0003] The...

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Problems solved by technology

However, there are currently two major problems facing InGaAs CMOS devices: 1) heterogeneous integration of InGaAs CMOS devices and silicon substrates; 2) power consumption of integrated CMOS devices

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