Electroless plating solution, preparation method and nonmetal electroless plating method
An electroless plating solution and electroless plating technology, applied in liquid electroless plating, metal material coating process, coating and other directions, can solve the problems of leakage plating and overflow plating, less activation center material, poor plating ability, etc. The effect of complete coating, short initiation cycle and fast plating speed
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[0019] The present invention also provides the preparation method of the electroless plating solution, first dissolving nickel salt and copper salt in water, then adding complexing agent, pH buffer agent, surfactant and dimethylformamide, and finally adding reducing agent, Stir until dissolved. Electroless plating works best when the pH is controlled between 8-9.
[0020] The present invention also provides a method for electroless plating on a non-metallic surface, comprising activating the pretreated non-metallic substrate with an ionic palladium activation solution, then placing it in an ionic palladium reducing solution for reduction treatment, and finally immersing it in The electroless plating is performed in an electroless plating solution; wherein, the electroless plating solution is the electroless plating solution provided by the present invention.
[0021] The electroless plating solution provided by the present invention has an excellent electroless plating effect...
Embodiment 1~6
[0029] 1. Preparation of electroless plating solution: dissolve nickel sulfate and copper sulfate in water, add complexing agent, stabilizer, pH buffering agent, reducing agent, and finally add dimethylformamide, and control the pH value at 8-9. According to the composition ratio in Table 1, the electroless plating solutions A1~A5 were obtained. The specific dosage of each component is shown in Table 1.
[0030] 2. Ultrasonically degrease a 2×2cm polycrystalline silicon wafer, and use a pretreatment slurry (the pretreatment slurry is composed of tetraisopropyl titanate, nickel acetylacetonate, ethyl maltol, and solvent ethyl acetate according to weight) ratio of 0.20:0.05:0.31:1 to form a slurry) to coat the surface of the silicon wafer, and then cover the surface of the silicon wafer with a mask. The mask includes a light-transmitting area and an opaque area. Form a circuit pattern inside, soak and wash off excess pretreatment slurry with a developing solution (the developin...
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