Heat treatment manufacturing process

Abstract

The embodiment of the invention discloses a heat treatment manufacturing process. Firstly, a to-be-heated semiconductor substrate is provided; and then, at least a first heating beam and a second heating beam with different energy densities are used for heating the semiconductor substrate. Thus, the trouble of switching different stocks in the case of the heat treatment manufacturing process currently can be omitted, the manufacturing process period is shortened, and the problem that a patterned phenomenon is generated when only the front surface of the semiconductor substrate is heated can be improved.

Description

technical field [0001] The invention relates to a heat treatment manufacturing process, in particular to a manufacturing process for simultaneously heating a semiconductor substrate by using at least two heating beams with different energy densities. Background technique [0002] As semiconductor manufacturing technology becomes more and more sophisticated, integrated circuits have undergone major changes, which has led to a rapid increase in computing performance and storage capacity of computers, and has driven the rapid development of peripheral industries. The semiconductor industry is also developing at the speed of doubling the number of transistors on integrated circuits every 18 months, as predicted by Moore's Law. 90 nanometers (nm) in 2005, entered 65 nanometers in 2005, and moved towards 45 nanometers. Therefore, along with the advancement of semiconductor manufacturing technology and the miniaturization of microelectronic components, the density of semiconductor...

AI Technical Summary

Problems solved by technology

[0004] Therefore the object of the present invention is to provide a kind of method that a semiconductor substrate to be heated is carried out heat treatment, to solve the accompanying problem of above-mentioned existing thermal fabrication process

Therefore, the present invention can not only save the trouble of switching different machines during the heat treatment process and shorten the process cycle, but also improve the problem of patterning caused by heating only the front side of the semiconductor substrate.