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Device heat transfer nondestructive failure analysis method and device

An analysis method and a lossless technology, applied in the direction of measuring devices, analyzing materials, and using radiation for material analysis, etc., can solve difficult non-destructive analysis, destructive failure analysis and other problems, to avoid time-consuming and cost-consuming, and save analysis Cost and time saving effects

Inactive Publication Date: 2017-06-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention solves the technical problem in the prior art that non-destructive analysis is difficult and only destructive failure analysis can be performed for thick metal packaged power devices by providing a device heat conduction non-destructive failure analysis method and device

Method used

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  • Device heat transfer nondestructive failure analysis method and device
  • Device heat transfer nondestructive failure analysis method and device
  • Device heat transfer nondestructive failure analysis method and device

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Embodiment 1

[0045] In this embodiment, a non-destructive analysis method for heat conduction of a device is provided, such as figure 1 Said, said method comprises:

[0046] Step S101, obtaining the structure function curve of the device to be analyzed;

[0047] Step S102, comparing the structure function curve of the device to be analyzed with the structure function curve of the qualified device to determine the abnormal thermal resistance layer of the device to be analyzed;

[0048] Step S103, using X-ray computerized tomography method to reconstruct the structural image of the abnormal thermal resistance layer;

[0049] Step S104, according to the structural image reconstruction result, determine the failure cause of the abnormal thermal resistance layer.

[0050] It should be noted that the method provided in this application is especially suitable for thick metal packaged power devices, because it is difficult to analyze layer by layer of thick metal packaged power devices using con...

Embodiment 2

[0074] In an embodiment, a device heat conduction lossless failure analysis device is provided, such as Figure 8 As shown, the device includes:

[0075] An acquisition module 801, configured to acquire the structure function curve of the device to be analyzed;

[0076] The comparison module 802 is used to compare the structure function curve of the device to be analyzed with the structure function curve of the qualified device, so as to determine the abnormal thermal resistance layer of the device to be analyzed;

[0077] The reconstruction module 803 is configured to perform structural image reconstruction on the abnormal thermal resistance layer by using an X-ray computerized tomography method;

[0078] The determination module 804 is configured to determine the failure cause of the abnormal thermal resistance layer according to the structural image reconstruction result.

[0079] It should be noted that the device provided by this application is especially suitable for t...

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Abstract

The invention discloses a device heat transfer nondestructive failure analysis method and a device. The method comprises: acquiring a structural function curve of a device to be analyzed; comparing the structural function curve of the device to be analyzed with a structural function curve of a qualified device so as to determine a heat resistance abnormal layer of the device to be analyzed; by adopting an X-ray computerized tomographic scanning method, carrying out structural image reconstruction on the heat resistance abnormal layer; according to a structural image reconstruction result, determining a failure reason of the heat resistance abnormal layer. The method provided by the invention solves the technical problem that in the prior art, a power device packaged by a thick metal is difficult to subject to nondestructive analysis and can be only subjected to destructive failure analysis. The invention provides a failure analysis method which is applicable to the power device packaged by the thick metal, is nondestructive and saves time and analysis cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a device heat conduction lossless failure analysis method and device. Background technique [0002] Power devices will generate a lot of heat during operation. In order to prevent overheating and burnout, the devices need to have better heat dissipation performance. Therefore, the thermal resistance value of the device cannot exceed the standard requirement. Failure analysis is required for devices with thermal resistance exceeding the standard, and in many cases, the failed samples cannot be destroyed, and can only be carried out by non-destructive testing. Existing power device thermal resistance exceeds the standard without loss failure analysis is mainly realized by X-Ray perspective instrument or SAM, that is, the device is scanned by X-ray or ultrasonic wave, and according to the transmission and reflection of X-ray or ultrasonic wave in each layer of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/04
CPCG01N23/046
Inventor 张宇隆高博邓海涛王立新罗家俊韩郑生
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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