A soi-based heterojunction thermally insensitive laser structure and fabrication method

Abstract

The invention relates to the technical field of lasers, and provides an SOI-based heterojunction thermal-insensitive laser structure and a manufacturing method, wherein the structure comprises an SOI substrate, an III-V active area waveguide, a polymer waveguide having a negative refractive index temperature coefficient and a silicon waveguide; the light exit of the III-V active area waveguide is coupled to the light inlet of the silicon waveguide; the light exit of the silicon waveguide is coupled to the light inlet of the polymer waveguide; and the light exit of the polymer waveguide is coupled to the light exit of the laser. By means of the embodiment of the invention, thermal insensitivity of the laser can be realized; when temperature is changed, the optical wavelength of the laser is constant; a TEC does not need to be additionally used to control the temperature; therefore, the power consumption of a module can be greatly reduced; encapsulation of more optical channels in the same encapsulation manner can be realized; the laser in the embodiment of the invention is manufactured on an SOI; a chip can emit light, which can directly enter the optical waveguide to transmit; additional coupling is not needed; and integration and batch production are easily carried out.

Description

【Technical field】 [0001] The invention relates to the technical field of lasers, in particular to an SOI-based heterojunction thermally insensitive laser structure and manufacturing method. 【Background technique】 [0002] As the demand for information transmission bandwidth has been growing at an explosive rate, in order to meet the rapid development of network traffic, in the backbone network, 40Gbps and 100Gbps optical networks have begun commercial deployment, and 400Gbps or 1Tbps optical communication systems have also begun research. The development of high-speed and wide-bandwidth requires the wavelength interval of wavelength division multiplexing to be smaller and smaller, especially after the rate reaches 100Gbps, the communication window of LWDM (LinkedWavelength Division Multiplexing) requires the wavelength to change in the range of 2nm, and the existing laser chip will change with the temperature. change and wavelength shift. In the packaging of high-speed opti...

AI Technical Summary

Problems solved by technology

The introduction of TEC not only increases the power consumption of the entire optical module, but also brings great inconvenience to the packaging. The same packaging form, such as four-channel SFP interface (Quad Small Form-factor Pluggable, abbreviated as: QSFP), CFP4, etc. Free up part of the space to package TEC, the reduction of chip packaging space limits the introduction of multi-channel communication wavelengths, and affects the development of multi-channel high-speed optical modules

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