A kind of soi hybrid integrated laser and its preparation method

Abstract

An SOI hybrid integrated laser comprises an SOI substrate, reflection structures and an III-V active region waveguide, wherein the reflection structures are formed on the SOI structure and are arranged opposite to each other, the III-V active region waveguide is arranged between the reflection structures. Coupling conversion between the III-V active region waveguide and a silicon waveguide layer of the SOI substrate is achieved by a one-dimensional photonic crystal waveguide fabricated on the SOI substrate, the integral stable reflectivity is achieved by filing a negative-reflectivity temperature coefficient polymer material in round holes of the photonic crystal, the reflectivity is not changed with temperature change, TEC is not needed to control a temperature, the power consumption of an optical module / optical device can be greatly reduced, the device package space is reduced, the rate expansion of an optical device passage is facilitated, and implementation of a full-optical interconnection technology is convenient.

Description

technical field [0001] The invention belongs to the field of optical communication, and in particular relates to an SOI hybrid integrated laser and a preparation method thereof. Background technique [0002] With the rise of 5G, cloud computing, and big data centers, data center traffic and bandwidth have grown exponentially. According to Cisco's forecast, global data center IP traffic will grow from 4.7ZB per year in 2015 to 15.3ZB per year in 2020, compounded annually The growth rate is about 27%. The market has higher and higher requirements for the rate of optical modules. At present, 40Gbps and 100Gbps optical networks have begun to be fully commercialized, and 400Gbps or 800Gbps optical communication systems have also begun to produce engineering samples. The miniaturization and high integration requirements of optical modules are getting higher and higher. The LAN-WDM wavelength in the communication protocol requires a 5nm interval, and the wavelength temperature dri...

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Problems solved by technology

However, due to the limited packaging space, the introduction of components such as TECs and thermistors occupies a large part of the device packaging space, which increases the difficulty of packaging and is even more detrimental to the development trend of device miniaturization.

[0004] On the other hand, in the packaging of optical devices, the optical interconnection of silicon photonics is the mainstream trend of future development, but silicon materials have an indirect band gap, and the luminous efficiency is very low when used as a light source, which limits the development of all-optical interconnections; III-V materials Well-established for use as a light source

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