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Contact structures of finFET devices

A technology of field-effect transistors and contact structures, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Inactive Publication Date: 2017-07-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While existing FinFET devices and methods of forming them are generally adequate for their intended purposes, they are not completely satisfactory in all respects

Method used

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  • Contact structures of finFET devices
  • Contact structures of finFET devices
  • Contact structures of finFET devices

Examples

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Embodiment Construction

[0012] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and configurations are described below for the purpose of conveying the disclosure in a simplified form. Of course, these are examples only and not limiting. For example, in the following description, forming a second feature over or on a first feature may include embodiments where the second feature is formed in direct contact with the first feature, and may also include embodiments where the second feature is in direct contact with the first feature. Embodiments where additional features may be formed between one feature such that the second feature may not be in direct contact with the first feature. Additionally, the present disclosure may use the same device symbols and / or letters in various instances to refer to the same or similar components. The re-use of device symbols is for simplicity ...

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Abstract

Contact structures, FinFET devices and methods of forming the same are disclosed. One of the contact structures includes a source / drain region, a mask layer, a connector and a shielding pattern. The source / drain region is between two gate stacks. A mask layer is over the gate stacks and has an opening corresponding to the source / drain region. The connector is electrically connected to the source / drain region, penetrates through the opening of the mask layer and protrudes above and below the mask layer. The shielding pattern is between the mask layer and the connector and in physical contact with the mask layer.

Description

technical field [0001] Embodiments of the present invention relate to a contact structure, a fin field effect transistor device and a forming method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design techniques have enabled ICs to evolve from generation to generation. Compared with the previous generation, the next generation of ICs is smaller in size and more complex in circuit. During the evolution of integrated circuits, functional density (ie, the number of interconnected devices per chip area) has continued to increase, while geometry size (ie, the smallest device or line that can be produced using a fabrication process) has continued to shrink. Such scaling down processes generally provide benefits by increasing production efficiency and reducing associated costs. [0003] This scaling down increases the complexity of handling and manufacturing ICs, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66795H01L29/785H01L2029/7858H01L29/41791H01L21/3085H01L23/535H01L29/6656
Inventor 张哲诚林志翰曾鸿辉
Owner TAIWAN SEMICON MFG CO LTD