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Level shifter and display device

A technology of level shifting circuit and level, applied in the direction of circuit device, emergency protection circuit device, logic circuit connection/interface layout, etc., can solve the problems of reducing the display effect and affecting the rise time of LevelShifter voltage, so as to avoid melting screen, The effect of shortening the rise time and increasing the resistance

Active Publication Date: 2017-12-15
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the series resistance, it will affect the voltage rise time of the Level Shifter, thus reducing the display effect

Method used

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  • Level shifter and display device

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Embodiment Construction

[0036] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the figures, structurally similar units are denoted by the same reference numerals.

[0037] Please refer to figure 2 , figure 2 It is a circuit diagram of the level shift circuit of the present invention. Such as figure 2 As shown, the level shift circuit of the present invention includes a logic setting unit 21 , a control unit 22 , a first field effect transistor Q1 , a second field effect transistor Q2 and an overcurrent protection module 20...

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Abstract

The invention provides a level shifter and a display device. The level shifter comprises a logic setting unit, a control unit, a first field-effect transistor, a second field-effect transistor, and an overcurrent protection module, wherein an input end of the logic setting unit inputs an initial signal, and an output end of the logic setting unit is connected with an input end of the control unit; the control unit is provided with a first output end and a second output end; a gate of the first field-effect transistor is connected with the first output end, and a high-level voltage is input to a source of the first field-effect transistor; a gate of the second field-effect transistor is connected with the second output end, and a low-level voltage is input to a source of the second field-effect transistor; drains of the first field-effect transistor and the second field-effect transistor are both connected with a main output end; and the overcurrent protection module is used for reducing the resistance of the level shifter at a starting stage of the level shifter, and increasing the resistance of the level shifter at a working stage of the level shifter. The level shifter and the display device provided by the invention have the advantages that voltage rise time can be shortened, and false triggering and screen melting can be avoided.

Description

【Technical field】 [0001] The invention relates to the field of display technology, in particular to a level shift circuit and a display device. 【Background technique】 [0002] The level shifter circuit (Level Shifter) is an important IC used in the array substrate row drive (GOA, Gate Driver on Array) circuit, and its main function is to convert the input logic signal CK-IN into a high-level logic Signal CLK-OUT. Such as figure 1 As shown, the existing level shift circuit includes a logic setting unit 11, a control unit 12, a first field effect transistor Q1 and a second field effect transistor Q2; both the logic setting unit 11 and the control unit 12 are used to set the low power The flat voltage signal is converted into a high-level voltage signal. The gate of the first field effect transistor Q1 is connected to the first output terminal 121 of the control unit 12, and its source is connected to the high-level voltage VGH. The second field effect transistor Q1 The gate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185H03K19/003
CPCH03K19/00369H03K19/0185G09G3/20G09G2310/0267G09G2310/0289G09G2330/025G09G2330/026H03K19/00315H03K19/00384H03K19/01855G09G5/003G09G2300/08H02H3/0935
Inventor 张先明张裕桦
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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