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Measurement method and device of striation-shaped morphology characterization parameters

A morphology characterization and parameter technology, applied in measurement devices, material analysis using measurement of secondary emissions, instruments, etc., can solve problems such as the inability to quantify the severity of streak morphology

Active Publication Date: 2018-01-09
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0004] In view of this, the present application provides a method and device for measuring the characteristic parameters of the streak-like morphology to solve the technical problem in the prior art that the severity of the streak-like morphology cannot be quantitatively analyzed

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  • Measurement method and device of striation-shaped morphology characterization parameters
  • Measurement method and device of striation-shaped morphology characterization parameters
  • Measurement method and device of striation-shaped morphology characterization parameters

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Embodiment Construction

[0048] In order to make the above objects, features and advantages of the present application more obvious and understandable, the embodiments of the present application will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0049] In practical applications, deep hole etching can be performed on the wafer to process some electronic devices. In the deep hole etching process, the etched deep hole outline may appear streak-like. In order to solve the technical problem that the severity of streak-like morphology cannot be quantitatively analyzed in the prior art, the embodiment of the present application provides a method and device for measuring the characteristic parameters of streak-like morphology. By fitting the deep hole etching morphology Obtain the coordinates of the center point of the deep hole at the boundary of the medium-deep hole. By calculating the length values ​​of multiple diameters passing th...

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Abstract

The invention discloses a measurement method of striation-shaped morphology characterization parameters, which is used for quantitatively measuring the severity of striation-shaped morphology etched by deep holes. The method comprises the following steps: obtaining a hole section image output by an electronic scanner microscope, and identifying a centre point coordinate of a hole in the hole section image; obtaining the length values of n diameters at the centre point coordinate, and ensuring that n is an integer greater than 1; computing the variance of the length values of the n diameters, and taking the variance as a striation-shaped morphology characterization parameter of the hole. The invention further discloses a measurement device of striation-shaped morphology characterization parameters.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular to a method and device for measuring characteristic parameters of streak-like morphology. Background technique [0002] When processing specific electrical devices, a deep hole etching process is used. In the deep hole etching process, striations may appear in the etched deep hole outline. The manifestation of streak-like morphology is: see figure 1 As shown, the deep pores appear as vertical streaks in the longitudinal section; see figure 2 As shown, the edge of the deep hole in the transverse section is jagged. The streak-like morphology of deep holes will adversely affect the subsequent hole filling process and affect the electrical performance of the device. [0003] In the prior art, a scanning electron microscope (scanning electron microscope, SEM) can be used to observe the longitudinal section and transverse section of the deep hole to characterize t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/22G01B15/00G01B15/04
Inventor 苏恒王琨王猛陈保友芈健陈子琪刘隆冬闫伟明朱喜峰
Owner YANGTZE MEMORY TECH CO LTD
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